抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely suitable for depositing uniform and conformal films on complex three-dimensional topographies. The deposition of a film of a given material by ALD relies on the successive, separated, and self-terminating gas–solid reactions of typically two gaseous reactants. Hundreds of ALD chemistries have been found for depositing a variety of materials during the past decades, mostly for inorganic materials but lately also for organic and inorganic–organic hybrid compounds. One factor that often dictates the properties of ALD films in actual applications is the crystallinity of the grown film: Is the material amorphous or, if it is crystalline, which phase(s) is (are) present. In this thematic review, we first describe the basics of ALD, summarize the two-reactant ALD processes to grow inorganic materials developed to-date, updating the information of an earlier review on ALD [R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005)], and give an overview of the status of processing ternary compounds by ALD. We then proceed to analyze the published experimental data for information on the crystallinity and phase of inorganic materials deposited by ALD from different reactants at different temperatures. The data are collected for films in their as-deposited state and tabulated for easy reference. Case studies are presented to illustrate the effect of different process parameters on crystallinity for representative materials: aluminium oxide, zirconium oxide, zinc oxide, titanium nitride, zinc zulfide, and ruthenium. Finally, we discuss the general trends in the development of film crystallinity as function of ALD process parameters. The authors hope that this review will help newcomers to ALD to familiarize themselves with the complex world of crystalline ALD films and, at the same time, serve for the expert as a handbook-type reference source on ALD processes and film crystallinity.

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

TiO2 photocatalyst for removal of volatile organic compounds in gas phase - A review

The furan/maleimide Diels–Alder reaction: A versatile click–unclick tool in macromolecular synthesis

This article attempts to give an overview of the literature on the treatment of textiles with non-thermal plasmas. Because of the enormous amount of potential uses of non-thermal plasmas for the modification of textile products, categorizing the applications is difficult, and therefore a review is given on plasma treatment effects or results rather than on the textile applications that benefit from the treatment.

Non-thermal plasma treatment of textiles

In this work, polyamide (Nylon 6) fibers and films were treated under atmospheric pressure glow discharges (APGD) and the effects on the morphology and chemistry of the material were studied. The fibers were plasma treated with N 2 , C 2 H 2 in He for (0.6–9.6) s at a frequency of 90 kHz, leading to the functionalization of the surface through the addition of new reactive chemical groups such as –COOH and –OH and changing the energy, chemical composition and wettability of the surface. Surface characteristics were examined via contact angle measurements, XPS, and SEM. Wettability tests revealed the improvement of the hydrophilic character of the surface as the water contact angle measured after the plasma treatments significantly decreased. The corresponding changes of the total surface energy were evaluated with a dynamic contact angle analysis system revealing a significant increase due to the exposure that can be mainly attributed to the increase of its polar component. Preliminary XPS results show a significant increase in oxygen content with the addition of carboxylic and hydroxylic groups and a decrease in the carbon content of the surface. Most importantly, the plasma modified nylon fibers and films exhibit a stable wetting behavior, even for weeks after being treated, suggesting that it is a promising technique to minimize aging phenomena.

Surface modification of polyamide fibers and films using atmospheric plasmas

Doped and undoped nanostructured titanium dioxide was synthesized via a sol–gel method under varying conditions to determine the effects of neodymium ion doping on the titania lattice. Specifically, the effects of doping on the anatase to rutile phase transformation were studied. Samples were analyzed by a variety of techniques, including X-ray diffraction, Rutherford back-scattering spectroscopy, scanning electron microscopy, and energy dispersive X-ray spectrometry to investigate the thermodynamic and structural effects of dopant addition. Analysis of the anatase to rutile phase transformation in TiO 2 showed a maximum increase in activation energy for 0.1 mol% Nd 3+ doped TiO 2 with no further response at higher dopant concentrations. This was supported by structural analyses, which showed distortion only along the c -axis of anatase TiO 2 with a maximal distortion at 0.1 mol% Nd 3+ and no further response at higher concentration. This is due to a combination of interstitial and substitutional accommodation of the dopant ions.

http://www.physics.udel.edu/%7Eismat/2003p3.pdf

Neodymium ion dopant effects on the phase transformation in sol-gel derived titania nanostructures

HfO2 thin films have been deposited by an atomic layer deposition (ALD) process using alternating pulses of tetrakis-ethylmethylamino hafnium and H2O precursors at 250 °C. The as-deposited films are mainly amorphous and nearly stoichiometric HfO2 (O/Hf ratio ∼1.9) with low bonded carbon content (∼3 at. %). A comparison of the nucleation stage of the films on OH- and H-terminated Si(100) surfaces has been performed using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). We find for the initial 5–7 process cycles that the film nucleates more efficiently on the OH-terminated surface. However, after the 7th cycle both surfaces exhibit similar surface coverage, which takes about 40 cycles to reach a steady growth rate per cycle. Angle resolved XPS measurements reveal the formation of a ∼6 A interfacial layer after four ALD cycles on the H-terminated surface and the thickness of the interfacial layer does not change substantially between the 4th...

Nucleation of HfO2 atomic layer deposition films on chemical oxide and H-terminated Si

HfO2 films have been deposited by using a tetrakis(dimethylamino)hafnium/H2O atomic layer deposition (ALD) process on GaAs. X-ray photoelectron spectroscopy measurements show that the HF and NH4OH predeposition surface treatment results in efficient removal of the Ga and As native oxides. No interface oxidation is detected after 15cycles of HfO2 ALD implying effective passivation of the GaAs surface. Spectroscopic ellipsometry confirms linear growth at 1.0A∕cycle on both starting surfaces, while Rutherford backscattering spectrometry indicates steady-state coverage after about 10 ALD cycles. For films grown on native oxide GaAs, complete removal of the As oxide is observed after 20 ALD cycles.

Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces

HfO2 thin films have been deposited by an atomic layer deposition (ALD) process using alternating pulses of tetrakis(dimethyl)amino hafnium and H2O precursors at a substrate temperature of 200–325°C. The initial stage of film growth on OH- and H-terminated Si(100) surfaces is investigated using Rutherford backscattering spectrometry (RBS), x-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). The authors observe an initial growth barrier on the Si–H surface for the first approximately four process cycles, where film growth is more efficient on the OH-terminated surface. Both starting surfaces require about 15cycles to reach a steady growth rate per cycle, with the OH-terminated surface displaying a slightly higher growth rate of 2.7×1014Hf∕cm2 compared to 2.4×1014Hf∕cm2 for Si–H. Combining the RBS and SE data we conclude that the films deposited on the OH-terminated surface are denser than those deposited on the Si–H surface. Angle-resolved XPS measurements reveal the formation of a...

J. Derek Demaree

Papers

Surface modification of polyamide fibers and films using atmospheric plasmas

Neodymium ion dopant effects on the phase transformation in sol-gel derived titania nanostructures

Nucleation of HfO2 atomic layer deposition films on chemical oxide and H-terminated Si

Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces

Growth and interface of HfO2 films on H-terminated Si from a TDMAH and H2O atomic layer deposition process