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J. M. Gibson

Researcher at Argonne National Laboratory

Publications -  126
Citations -  12821

J. M. Gibson is an academic researcher from Argonne National Laboratory. The author has contributed to research in topics: Silicon & Epitaxy. The author has an hindex of 43, co-authored 121 publications receiving 12418 citations. Previous affiliations of J. M. Gibson include AT&T & University of Illinois at Urbana–Champaign.

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Exceptionally high Young's modulus observed for individual carbon nanotubes

TL;DR: In this article, the amplitude of the intrinsic thermal vibrations of isolated carbon nanotubes was measured in the transmission electron microscopy (TEM) and it was shown that they have exceptionally high Young's moduli, in the terapascal (TPa) range.
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Surface derivatization and isolation of semiconductor cluster molecules

TL;DR: Steigerwald et al. as discussed by the authors described a synthesis of nanometer-sized clusters of CdSe using organometallic reagents in inverse micellar solution and chemical modification of the surface of these cluster compounds.
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Size effects in the excited electronic states of small colloidal CdS crystallites

TL;DR: In this article, the development of bulk optical properties as a function of crystallite size for the inorganic direct gap semiconductor CdS was studied in situ at extreme dilution.
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Excited electronic states and optical spectra of ZnS and CdS crystallites in the ≊15 to 50 Å size range: Evolution from molecular to bulk semiconducting properties

TL;DR: Very small ZnS and CdS crystallites were made and stabilized in aqueous and methanolic media without organic surfactants in this paper, and they were characterized by transmission electron microscopy and in situ optical spectroscopy (λ≳200 nm).
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Mesotaxy: single-crystal growth of buried CoSi2 layers

TL;DR: In this paper, single-crystal CoSi2 layers in silicon have been formed by high dose implantation of cobalt followed by annealing, and electrical transport measurements on the layers give values for the resistance ratios and superconducting critical temperatures that are better than the best films grown by conventional techniques.