This review provides numerical and graphical information about many (but by no means all) of the physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material. The emphasis is on properties of GaAs itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage. The geometry of the sphalerite lattice and of the first Brillouin zone of reciprocal space are used to pave the way for material concerning elastic moduli, speeds of sound, and phonon dispersion curves. A section on thermal properties includes material on the phase diagram and liquidus curve, thermal expansion coefficient as a function of temperature, specific heat and equivalent Debye temperature behavior, and thermal conduction. The discussion of optical properties focusses on dispersion of the dielectric constant from low frequencies [κ0(300)=12.85] through the reststrahlen range to the intrinsic edge, and on the ass...

Semiconducting and other major properties of gallium arsenide

Understanding energy dissipation and transport in nanoscale structures is of great importance for the design of energy-efficient circuits and energy-conversion systems. This is also a rich domain for fundamental discoveries at the intersection of electron, lattice (phonon), and optical (photon) interactions. This review presents recent progress in understanding and manipulation of energy dissipation and transport in nanoscale solid-state structures. First, the landscape of power usage from nanoscale transistors (∼10−8 W) to massive data centers (∼109 W) is surveyed. Then, focus is given to energy dissipation in nanoscale circuits, silicon transistors, carbon nanostructures, and semiconductor nanowires. Concepts of steady-state and transient thermal transport are also reviewed in the context of nanoscale devices with sub-nanosecond switching times. Finally, recent directions regarding energy transport are reviewed, including electrical and thermal conductivity of nanostructures, thermal rectification, and the role of ubiquitous material interfaces. 
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Energy dissipation and transport in nanoscale devices

Giant and isotropic magnetoresistance as huge as −53% was observed in magnetic manganese oxide La0.72Ca0.25MnOz films with an intrinsic antiferromagnetic spin structure. We ascribe this magnetoresistance to spin‐dependent electron scattering due to spin canting of the manganese oxide.

31p-S-4 Giant Magnetoresistance in Magnetic Manganese Oxide with Intrinsic Antiferromagnetic Spin Structure

Understanding energy dissipation and transport in nanoscale structures is of great importance for the design of energy-efficient circuits and energy-conversion systems. This is also a rich domain for fundamental discoveries at the intersection of electron, lattice (phonon), and optical (photon) interactions. This review presents recent progress in understanding and manipulation of energy dissipation and transport in nanoscale solid-state structures. First, the landscape of power usage from nanoscale transistors (~10^-8 W) to massive data centers (~10^9 W) is surveyed. Then, focus is given to energy dissipation in nanoscale circuits, silicon transistors, carbon nanostructures, and semiconductor nanowires. Concepts of steady-state and transient thermal transport are also reviewed in the context of nanoscale devices with sub-nanosecond switching times. Finally, recent directions regarding energy transport are reviewed, including electrical and thermal conductivity of nanostructures, thermal rectification, and the role of ubiquitous material interfaces.

/pdf/energy-dissipation-and-transport-in-nanoscale-devices-17sw2ubrhz.pdf

Energy Dissipation and Transport in Nanoscale Devices

https://hal.archives-ouvertes.fr/jpa-00239583/document

Il nuovo cimento

The thermal conductivity of the amorphous alloy Fe40Ni40P14B6 is investigated with the aim to separate out the lattice contribution and to compare it with that of amorphous dielectrics. The problems of the influence of the radiative transfer of heat between the sample and its environment, which causes errors in the determination of thermal conductivity, are discussed. The authors found that the temperature dependence of the lattice thermal conductivity of the alloys is qualitatively the same as that of amorphous dielectrics.

https://iopscience.iop.org/article/10.1088/0022-3727/20/11/022/pdf

Thermal conductivity of the amorphous alloy Fe40Ni40P14B6 between 80 and 300 K

The half-Heusler compounds ErPdSb and YPdSb were studied by means of x-ray diffraction, magnetic susceptibility, electrical resistivity, magnetoresistivity, thermoelectric power, Hall effect, thermal conductivity, and specific heat measurements, performed in the temperature range $1.5--300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ and in magnetic fields up to $12\phantom{\rule{0.3em}{0ex}}\mathrm{T}$. The Er-based compound is a paramagnet down to $1.7\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ and shows localized magnetism of ${\mathrm{Er}}^{3+}$ ions, while YPdSb exhibits a weak diamagnetic behavior. The crystal field effect in ErPdSb brings about a distinct Schottky anomaly in the specific heat. The total splitting of the erbium $^{4}I_{15∕2}$ multiplet in a cubic crystal field potential is of the order of $200\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, with a doublet being the ground state. Electrical properties of ErPdSb and YPdSb are governed by the formation of narrow gaps in the electronic band structures very close to the Fermi level. The Hall effect measured for ErPdSb indicates a complex electronic structure with multiple electron and hole bands with different temperature and magnetic field variations of carrier concentrations and mobilities. The thermal conductivity of ErPdSb is relatively low and dominated by the phonon contribution. At room temperature the Seebeck coefficient is of order $150\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{V}∕\mathrm{K}$ for Er- and $200\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{V}∕\mathrm{K}$ for Y-based compound, respectively, making these materials promising candidates for thermoelectric applications. This conjecture is supported by the value of the figure of merit of ErPdSb, which is about 0.15 at room temperature.

Magnetic, transport, and thermal properties of the half-Heusler compounds ErPdSb and YPdSb

Thermal conductivity and electrical resistivity of the high-Tc superconductor YBa2Cu3O9−Δ

Thermal conductivity of crystalline natural nitrogen was investigated over the temperature range 1.2--38 K. The temperature dependence of thermal conductivity of \ensuremath{\alpha}-nitrogen has been determined in temperatures below 18 K. The thermal conductivity coefficient reaches the maximum value 250 mW/cm K at 3.6 K. The results of the experiment below 14 K can be well described by integral equation obtained by the method of Callaway. Relaxation times for various mechanisms of phonon scattering have been determined. The results of our experiments are in accord with earlier literature data for temperatures above 18 K.

Thermal conductivity of solid nitrogen.

Here we report the results of an experimental study of the thermal conductivity of GaN crystals doped by oxygen with concentrations of 4 × 1016, 2.6 × 1018 and 1.1 × 1020 cm−3, carried out in the temperature interval 7–318 K. We observed the highest thermal conductivity ever reported for GaN, 269 Wm–1 K–1 at 300 K, in the sample with the lowest oxygen content. This result is explained by the renormalization of GaN elastic constants, caused by the effect of spontaneous polarization. Results were analyzed using the Callaway model. The contribution of phonon scattering by free carriers in doped GaN crystals was considered for the first time. We show that free electrons reduce the thermal conductivity by up to 32%–42% at 300 K for a sample with a 1.1 × 1020 cm−3 of oxygen concentration.

http://iopscience.iop.org/article/10.1088/2053-1591/2/8/085902/pdf

J. Mucha

Papers

Thermal conductivity of the amorphous alloy Fe40Ni40P14B6 between 80 and 300 K

Magnetic, transport, and thermal properties of the half-Heusler compounds ErPdSb and YPdSb

Thermal conductivity and electrical resistivity of the high-Tc superconductor YBa2Cu3O9−Δ

Thermal conductivity of solid nitrogen.

Thermal conductivity of heavily doped bulk crystals GaN:O. Free carriers contribution