J
J. Ngo
Researcher at Santa Cruz Institute for Particle Physics
Publications - 5
Citations - 238
J. Ngo is an academic researcher from Santa Cruz Institute for Particle Physics. The author has contributed to research in topics: Silicon & Semiconductor detector. The author has an hindex of 5, co-authored 5 publications receiving 205 citations.
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Journal ArticleDOI
Ultra-fast silicon detectors
Hartmut Sadrozinski,S. Ely,Vitaliy Fadeyev,Z. Galloway,J. Ngo,C. Parker,B. Petersen,Abraham Seiden,A. Zatserklyaniy,Nicolo Cartiglia,F. Marchetto,Mara Bruzzi,R. Mori,Monica Scaringella,Anna Vinattieri +14 more
TL;DR: In this article, the authors proposed a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10μm) and time ( ∼10ps) coordinates of a particle.
Journal ArticleDOI
Performance of Ultra-Fast Silicon Detectors
Nicolo Cartiglia,M. Baselga,G. Dellacasa,Scott Ely,Vitaliy Fadeyev,Z. Galloway,F. Marchetto,S. Maroiu,G. Mazza,J. Ngo,Maria Margherita Obertino,C. Parker,Angelo Rivetti,D. Shumacher,Abraham Seiden,A. Zatserklyaniy +15 more
TL;DR: In this article, the authors explore the timing performance of low-gain avalanche detectors and demonstrate the possibility of obtaining ultra-fast silicon detectors with time resolution of less than 20 picosecond.
Journal ArticleDOI
Performance of ultra-fast silicon detectors
Nicolo Cartiglia,M. Baselga,M. Baselga,G. Dellacasa,Scott Ely,Scott Ely,Vitaliy Fadeyev,Z. Galloway,S. Garbolino,F. Marchetto,S. Martoiu,G. Mazza,J. Ngo,Maria Margherita Obertino,C. Parker,Angelo Rivetti,D. Shumacher,H. F-W. Sadrozinski,Abraham Seiden,A. Zatserklyaniy +19 more
TL;DR: In this article, the authors explore the timing performance of low-gain avalanche detectors and demonstrate the possibility of obtaining ultra-fast silicon detectors with time resolution of less than 20 picosecond.
Journal ArticleDOI
Sensors for ultra-fast silicon detectors
Hartmut Sadrozinski,M. Baselga,S. Ely,Vitaliy Fadeyev,Z. Galloway,J. Ngo,C. Parker,D. Schumacher,Abraham Seiden,A. Zatserklyaniy,Nicolo Cartiglia,Giulio Pellegrini,Pablo Fernandez-Martinez,V. Greco,Salvador Hidalgo,David Quirion +15 more
TL;DR: In this article, the authors investigate the non-uniform doping profile of low-gain avalanche detectors (LGAD), which are n-on-p pad sensors with charge multiplication due to the presence of a thin, low resistivity diffusion layer below the junction, obtained with a highly doped implant.
Journal ArticleDOI
Update on scribe–cleave–passivate (SCP) slim edge technology for silicon sensors: Automated processing and radiation resistance
Vitaliy Fadeyev,S. Ely,Z. Galloway,J. Ngo,C. Parker,Hartmut Sadrozinski,Marc Christophersen,Bernard F. Phlips,Giulio Pellegrini,Joan Marc Rafi,David Quirion,G.-F. Dalla Betta,Maurizio Boscardin,Gianluigi Casse,I. V. Gorelov,Martin Hoeferkamp,Jessica Metcalfe,Sally Seidel,Eugenijus Gaubas,Tomas Ceponis,J. Vaitkus +20 more
TL;DR: In this article, the scribe-cleave-passivate (SCP) technology was used to reduce the inactive region at the periphery of the sensors while maintaining their performance.