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Eugenijus Gaubas

Researcher at Vilnius University

Publications -  166
Citations -  1412

Eugenijus Gaubas is an academic researcher from Vilnius University. The author has contributed to research in topics: Carrier lifetime & Photoconductivity. The author has an hindex of 17, co-authored 164 publications receiving 1333 citations.

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GaN as a radiation hard particle detector

TL;DR: In this paper, Pad and guard ring structures were fabricated on three epitaxial GaN wafers and the fabricated detectors were irradiated to various fluences with 24 GeV / c protons and 1 MeV neutrons.
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Wide bandgap semiconductor detectors for harsh radiation environments

TL;DR: In this paper, two wide bandgap materials, silicon carbide (SiC) and gallium nitride (GaN), were investigated for their performance in harsh radiation environments.
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Dependence of carrier lifetime in germanium on resisitivity and carrier injection level

TL;DR: In this paper, the dependence of carrier lifetime on resistivity and carrier injection level in germanium crystals is studied using microwave probing of optically excited samples, and it is shown that the carrier recombination transients are driven by a system of recombination and trapping centers.
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Comparative Study of Carrier Lifetime Dependence on Dopant Concentration in Silicon and Germanium

TL;DR: In this article, a comparative study of the dependence of the carrier recombination characteristics on excitation and dopant concentration in both semiconductors is presented, where the bulk carrier lifetime is determined as a function of dopant concentrations.
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Radiation-hard semiconductor detectors for SuperLHC

Mara Bruzzi, +284 more
TL;DR: The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors are reviewed and discussed in this work as mentioned in this paper, which includes the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors.