C
C. Parker
Researcher at Santa Cruz Institute for Particle Physics
Publications - 13
Citations - 347
C. Parker is an academic researcher from Santa Cruz Institute for Particle Physics. The author has contributed to research in topics: Silicon & Detector. The author has an hindex of 7, co-authored 13 publications receiving 307 citations. Previous affiliations of C. Parker include United States Naval Research Laboratory & University of California, Santa Cruz.
Papers
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Journal ArticleDOI
Ultra-fast silicon detectors
Hartmut Sadrozinski,S. Ely,Vitaliy Fadeyev,Z. Galloway,J. Ngo,C. Parker,B. Petersen,Abraham Seiden,A. Zatserklyaniy,Nicolo Cartiglia,F. Marchetto,Mara Bruzzi,R. Mori,Monica Scaringella,Anna Vinattieri +14 more
TL;DR: In this article, the authors proposed a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10μm) and time ( ∼10ps) coordinates of a particle.
Journal ArticleDOI
Performance of Ultra-Fast Silicon Detectors
Nicolo Cartiglia,M. Baselga,G. Dellacasa,Scott Ely,Vitaliy Fadeyev,Z. Galloway,F. Marchetto,S. Maroiu,G. Mazza,J. Ngo,Maria Margherita Obertino,C. Parker,Angelo Rivetti,D. Shumacher,Abraham Seiden,A. Zatserklyaniy +15 more
TL;DR: In this article, the authors explore the timing performance of low-gain avalanche detectors and demonstrate the possibility of obtaining ultra-fast silicon detectors with time resolution of less than 20 picosecond.
Journal ArticleDOI
Development of n + -in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results
Yoshinobu Unno,S. Edwards,S. Pyatt,J. P. Thomas,J. A. Wilson,J.A. Kierstead,David Lynn,J. R. Carter,L. B. A. H. Hommels,David Robinson,Ingo Bloch,I. M. Gregor,Kerstin Tackmann,Christopher Betancourt,Karl Jakobs,Susanne Kuehn,R. Mori,Ulrich Parzefall,L. Wiik-Fucks,A. G. Clark,Didier Ferrere,S. Gonzalez Sevilla,J. Ashby,Andrew Blue,Richard Bates,C. Buttar,F. Doherty,Lars Eklund,T. McMullen,F. McEwan,V. O׳Shea,S. Kamada,Kazuhisa Yamamura,Yoichi Ikegami,Koji Nakamura,Yosuke Takubo,R. Nishimura,Ryuichi Takashima,A. Chilingarov,Harald Fox,A. A. Affolder,P. P. Allport,Gianluigi Casse,Paul Dervan,D. Forshaw,A. Greenall,S. Wonsak,M. Wormald,Vladimir Cindro,Gregor Kramberger,Igor Mandić,Marko Mikuz,I. V. Gorelov,Martin Hoeferkamp,Prabhakar Palni,Sally Seidel,A. C. Taylor,Konstantin Toms,Rui Wang,Nigel Hessey,Nika Valencic,Y. Arai,Kazunori Hanagaki,Zdenek Dolezal,Peter Kodys,J. Bohm,Marcela Mikestikova,Adrian John Bevan,G. A. Beck,S. Ely,Vitaliy Fadeyev,Z. Galloway,Alexander Grillo,F. Martinez-McKinney,J. Ngo,C. Parker,H. F.W. Sadrozinski,D. Schumacher,A. Seiden,Richard French,Paul Hodgson,Hector Marin-Reyes,Kerry Ann Parker,S. Paganis,Osamu Jinnouchi,Kazuki Motohashi,Kazuki Todome,Dean T. Yamaguchi,Kazuhiko Hara,Mutsuto Hagihara,Carmen García,J. Jimenez,Carlos Lacasta,S. Marti i Garcia,U. Soldevila +94 more
TL;DR: In this paper, the authors have developed a novel radiation-tolerant n+in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider.
Journal ArticleDOI
Performance of ultra-fast silicon detectors
Nicolo Cartiglia,M. Baselga,M. Baselga,G. Dellacasa,Scott Ely,Scott Ely,Vitaliy Fadeyev,Z. Galloway,S. Garbolino,F. Marchetto,S. Martoiu,G. Mazza,J. Ngo,Maria Margherita Obertino,C. Parker,Angelo Rivetti,D. Shumacher,H. F-W. Sadrozinski,Abraham Seiden,A. Zatserklyaniy +19 more
TL;DR: In this article, the authors explore the timing performance of low-gain avalanche detectors and demonstrate the possibility of obtaining ultra-fast silicon detectors with time resolution of less than 20 picosecond.
Journal ArticleDOI
Sensors for ultra-fast silicon detectors
Hartmut Sadrozinski,M. Baselga,S. Ely,Vitaliy Fadeyev,Z. Galloway,J. Ngo,C. Parker,D. Schumacher,Abraham Seiden,A. Zatserklyaniy,Nicolo Cartiglia,Giulio Pellegrini,Pablo Fernandez-Martinez,V. Greco,Salvador Hidalgo,David Quirion +15 more
TL;DR: In this article, the authors investigate the non-uniform doping profile of low-gain avalanche detectors (LGAD), which are n-on-p pad sensors with charge multiplication due to the presence of a thin, low resistivity diffusion layer below the junction, obtained with a highly doped implant.