J
J.O.Y. Hayami
Publications - 1
Citations - 33
J.O.Y. Hayami is an academic researcher. The author has contributed to research in topics: Shallow trench isolation & Short-channel effect. The author has an hindex of 1, co-authored 1 publications receiving 33 citations.
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High performance 30 nm gate bulk CMOS for 45 nm node with /spl Sigma/-shaped SiGe-SD
Hiroyuki Ohta,Y. S. Kim,Y. Shimamune,T. Sakuma,Akiyoshi Hatada,Akira Katakami,T. Soeda,Kazuo Kawamura,H. Kokura,Hiroshi Morioka,Takanobu Watanabe,J.O.Y. Hayami,J. Ogura,M. Tajima,Toshihiko Mori,Naoyoshi Tamura,M. Kojima,K. Hashimoto +17 more
TL;DR: In this paper, the authors improved the short channel effect with keeping a high drive current by Sigma shaped SiGe-source/drain (SiGe-SD) structure and achieved a high performance 30 nm/33 nm gate nMOSFET with a drive current of 937/1000 muA/mum.