J
J.W. Orton
Researcher at University of Nottingham
Publications - 49
Citations - 1392
J.W. Orton is an academic researcher from University of Nottingham. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 18, co-authored 49 publications receiving 1363 citations. Previous affiliations of J.W. Orton include University of Tokushima.
Papers
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Journal ArticleDOI
Group III nitride semiconductors for short wavelength light-emitting devices
J.W. Orton,C. T. Foxon +1 more
TL;DR: In this article, the authors provide a detailed review of the state-of-the-art properties of the group III nitrides (AlN, GaN and InN).
Journal ArticleDOI
Selective growth of zinc‐blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy
TL;DR: In this paper, the growth of GaN with a zinc-blende, wurtzite, or a mixed phase structure on GaP and GaAs substrates by a low-temperature modified molecular beam epitaxy technique was reported.
Journal ArticleDOI
The growth and properties of group III nitrides
C. T. Foxon,Tin S. Cheng,Sergei V. Novikov,D.E. Lacklison,L. C. Jenkins,D. Johnston,J.W. Orton,S. E. Hooper,N. Baba-Ali,T.L. Tansley,V. V. Tret'yakov +10 more
TL;DR: In this article, a novel material system (AlGa)(AsN), which can be lattice matched to GaP (or more importantly Si), grown using a low temperature modified molecular beam epitaxy (MBE) technique to reduce the density of native defects.
Journal ArticleDOI
Photoluminescence studies of InGaN/GaN multi-quantum wells
TL;DR: In this article, the authors reported measurements of photoluminescence and time decay on three MOVPE-grown InGaN/GaN multiple quantum well structures with 13% In in the wells and well widths Lz = 1.25, 2.5 and 5.0 nm.
Journal ArticleDOI
Photoluminescence of MBE grown wurtzite Be-doped GaN
D J Dewsnip,A. V. Andrianov,Ian Harrison,J.W. Orton,D.E. Lacklison,G B Ren,S. E. Hooper,Tin S. Cheng,C. T. Foxon +8 more
TL;DR: In this paper, the photoluminescence (PL) spectrum of lightly be-doped GaN was investigated and a transition at 3.385 eV with first and second LO phonon replicas was reported.