J
J. Zhao
Researcher at University of New South Wales
Publications - 19
Citations - 836
J. Zhao is an academic researcher from University of New South Wales. The author has contributed to research in topics: Silicon & Polymer solar cell. The author has an hindex of 11, co-authored 19 publications receiving 801 citations.
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Journal ArticleDOI
Twenty‐four percent efficient silicon solar cells with double layer antireflection coatings and reduced resistance loss
TL;DR: In this paper, a combination of hydrogen passivation of silicon/silicon dioxide interfaces has been used to reduce recombination at cell surfaces, which has achieved a monochromatic light energy conversion efficiency of 46.3% for 1.04 μm wavelength light.
Journal ArticleDOI
Enhanced emission from Si-based light-emitting diodes using surface plasmons
TL;DR: The Centre of Excellence for Advanced Silicon Photovoltaics and Photonics is supported under the Australian Research Council's Centres of Excellence Scheme as mentioned in this paper, which is supported by the Australian Institute of Technology (AIT).
Journal ArticleDOI
Angle-dependent reflectance measurements on photovoltaic materials and solar cells
Antonio Parretta,Angelo Sarno,Pierpasquale Tortora,Haruna Yakubu,Pasqualino Maddalena,J. Zhao,Aihua Wang +6 more
TL;DR: In this paper, the results of angle-dependent reflectance measurements on photovoltaic materials and solar cells are presented and discussed and the optical apparatus employs an integrating sphere of 40 cm diameter and it is suitable for working at variable wavelengths and incidence angles of the light beam.
Proceedings ArticleDOI
Interpretation of the Commonly Observed I-V Characteristics of C-SI Cells Having Ideality Factor Larger Than Two
TL;DR: In this article, a coupled defect recombination via two shallow (or one shallow and one deep) level was applied to explain the observed high ideality factors due to trap-assisted tunneling.
Journal ArticleDOI
Minority carrier lifetime in plasma-textured silicon wafers for solar cells
TL;DR: In this paper, a comparison between plasma induced defects by two different SF6 etching techniques, Reactive Ion Etching (RIE) and High density Plasma (HDP), is presented.