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Jacques Allègre

Researcher at University of Montpellier

Publications -  71
Citations -  1320

Jacques Allègre is an academic researcher from University of Montpellier. The author has contributed to research in topics: Quantum well & Photoluminescence. The author has an hindex of 19, co-authored 71 publications receiving 1284 citations. Previous affiliations of Jacques Allègre include Centre national de la recherche scientifique.

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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

TL;DR: In this paper, a graded-width InGaN/GaN quantum well was used to study a time-resolved photoluminescence (PL) at T = 8 K, where the well width continuously varies from ∼5.5 to 2.0 nm.
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Time-resolved photoluminescence as a probe of internal electric fields in GaN-(GaAl)N quantum wells

TL;DR: In this article, the photoluminescence decay time of excitons is used as a probe of internal electric fields in GaN-(Ga, Al)N quantum wells in various configurations of strain, well widths, and barrier widths.
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Recombination dynamics of free and localized excitons in G a N / G a 0.93 Al 0.07 N quantum wells

TL;DR: In this paper, the authors derived the radiative lifetime of free excitons in the low-temperature limit (related to the oscillator strength) to be 2.4 ps, i.e., half one order of magnitude smaller than for GaAs/Ga-Al-As quantum wells.
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Quantum confinement effects of CdS nanocrystals in a sodium borosilicate glass prepared by the sol‐gel process

TL;DR: In this paper, a method based on the solgel technique is used for the preparation of CdS-activated glass, which is capable of providing nanocrystals covering a wide range of radii with small size dispersion.
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Band offsets and lattice-mismatch effects in strained-layer CdTe/ZnTe superlattices.

TL;DR: It is shown that, depending on the layer thicknesses, the superlattice may either have a type-I configuration, where electron and hole are mostly localized within CdTe layers, or atype-II configuration, which means the hole ground state may either be the heavy-hole subband or the light-hole one.