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Jakob Birkedal Wagner

Researcher at Technical University of Denmark

Publications -  226
Citations -  10084

Jakob Birkedal Wagner is an academic researcher from Technical University of Denmark. The author has contributed to research in topics: Nanowire & Catalysis. The author has an hindex of 51, co-authored 221 publications receiving 8579 citations. Previous affiliations of Jakob Birkedal Wagner include Odense University & Lund University.

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Atom-Resolved Imaging of Dynamic Shape Changes in Supported Copper Nanocrystals

TL;DR: In situ transmission electron microscopy is used to obtain atom-resolved images of copper nanocrystals on different supports, which are catalysts for methanol synthesis and hydrocarbon conversion processes for fuel cells.
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Atomic-Resolution in Situ Transmission Electron Microscopy of a Promoter of a Heterogeneous Catalyst

TL;DR: In the most active ruthenium catalyst for ammonia synthesis known so far, the barium promoter is shown to be located in two different phases in the catalyst, suggesting increased activity is suggested to be related to a two-dimensional barium-oxygen overlayer on the r Ruthenium crystals.
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Optical properties of rotationally twinned InP nanowire heterostructures.

TL;DR: A technique so that both transmission electron microscopy and microphotoluminescence can be performed on the same semiconductor nanowire over a large range of optical power, thus allowing us to directly correlate structural and optical properties of rotationally twinned zinc blende InP nanowires.
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Giant, level-dependent g factors in InSb nanowire quantum dots.

TL;DR: The measurements show that the quantum levels of the InSb quantum dots have giant g factors, with absolute values up to approximately 70, the largest value ever reported for semiconductor quantum dots, which indicates that considerable contributions from the orbital motion of electrons are preserved in the measured InB nanowire quantum dots.
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Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires

TL;DR: In this paper, the strain distribution in heterostructured wurtzite InAs/InP nanowires is measured by a peak finding technique using high resolution transmission electron microscopy images.