James S. Sewell

TL;DR: In this paper, a two-stage digital etching technique for GaAs is presented, which uses hydrogen peroxide and an acid in a two step etching process to remove GaAs in approximately 15 A increments.

TL;DR: In this paper, three passivation layers (SiN x, MgO, and Sc 2 O 3 ) were examined for their effectiveness in mitigating surface-state-induced current collapse in AlGaN/GaN high electron mobility transistors (HEMTs).

TL;DR: In this article, a comparison of specific contact resistivity and morphology of W-and WSi-based contacts with the standard Ti/Al/Pt/WSi/Ti/Au metallization was made.

TL;DR: Sc2O3-passivated AlGaN/GaN high electron mobility transistors (HEMTs) were irradiated with 40 MeV protons to a fluence corresponding to approximately 10 years in low-earth orbit (5×109 cm−2).

TL;DR: In this article, a periodic table group III-IV field effect transistor (FET) is described, which uses a single metalization for ohmic and Schottky barrier contacts, permanent plural etch stop layers, employs a non-alloyed ohmic connection semiconductor layer and includes a permanent semiconductor material-comprised secondary mask element.