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Design Of Analog Cmos Integrated Circuits

In general, Micropower Impulse Radar (MIR) depends on Ultra-Wideband (UWB) transmission systems. UWB technology can supply innovative new systems and products that have an obvious value for radar and communications uses. Important applications include bridge-deck inspection systems, ground penetrating radar, mine detection, and precise distance resolution for such things as liquid level measurement. Most of these UWB inspection and measurement methods have some unique qualities, which need to be pursued. Therefore, in considering changes to Part 15 the FCC needs to take into account the unique features of UWB technology. MIR is applicable to two general types of UWB systems: radar systems and communications systems. Currently LLNL and its licensees are focusing on radar or radar type systems. LLNL is evaluating MIR for specialized communication systems. MIR is a relatively low power technology. Therefore, MIR systems seem to have a low potential for causing harmful interference to other users of the spectrum since the transmitted signal is spread over a wide bandwidth, which results in a relatively low spectral power density.

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Response to FCC 98-208 notice of inquiry in the matter of revision of part 15 of the commission's rules regarding ultra-wideband transmission systems

Resonance conditions for a substrate-superstrate printed antenna geometry which allow for large antenna gain are presented. Asymptotic formulas for gain, beamwidth, and bandwidth are given, and the bandwidth limitation of the method is discussed. The method is extended to produce narrow patterns about the horizon, and directive patterns at two different angles.

Gain enhancement methods for printed circuit antennas

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Design Of Integrated Circuits For Optical Communications

This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems. The chapters on low-noise amplifiers, oscillators and phase noise have been significantly expanded as well. The chapter on architectures now contains several examples of complete chip designs that bring together all the various theoretical and practical elements involved in producing a prototype chip. First Edition Hb (1998): 0-521-63061-4 First Edition Pb (1998); 0-521-63922-0

The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES

An inductorless wideband low noise amplifier (LNA) with single to differential conversion is proposed for low power multiband and multi-standard radios. Conventionally common source (CS) and common gate (CG) based balun LNA suffers from high power dissipation. The proposed LNA uses dual shunt feedback to reduce the bias current of CG stage while this current is reused by CS stage. Complimentary CS stage is used to get maximum transconductance (g m ). The design is implemented in 180 nm CMOS technology and occupies an active chip area of 0.24 mm2. It achieves a maximum voltage gain of 18.5 dB, minimum noise figure of 2.8 dB, bandwidth ranging from 210 MHz to 1.1 GHz and an IIP3 of -13.4 dBm. The proposed design excluding the buffers draws a current of 3.1 mA from 1.8 V power supply.

An Inductorless Noise Cancelling Wideband Balun LNA with Dual Shunt Feedback and Current Reuse

In this paper mutual coupling reduction in two element MIMO antenna structure using a SRR like structure with variable length is proposed. The structure consists of two modified elliptical shaped monopole antennas with the interelement spacing of 23 mm are fabricated using 0.787 mm thick RT Duroid substrate. S11 and S21 less than −10 dB and −18 dB respectively are obtained over 3.1–10.6 GHz. The proposed structure has a good diversity performance, nearly constant group delay and transfer function variation within 10 dB over UWB.

Mutual coupling reduction using variable length srr like structure in ultra wideband MIMO antennas

A 1–11 GHz ultra‐wideband LNA using M‐derived inductive peaking circuit in UMC 65 nm CMOS

CMOS Technology scaling trends and power requirements demand circuits which operate at lower supply voltages. However threshold voltage scaling doesn't exactly follow supply voltage scaling. Therefore circuit techniques like current-mode circuits, which are less sensitive to supply voltage level, are required. In this direction and in the context of mixed-signal design this paper presents two 6-bit pipelined current-mode ADCs in UMC 0.18um MM (Mixed-Mode) CMOS process, one for high- speed & low-power and the other for high-resolution applications. Digital error correction has been taken care while designing the ADCs. The maximum sampling rate, average power dissipation and SNR for the first designed ADC, aimed for low-power and high-speed applications are 50MSPS, 56.38mW & 36.33dB, respectively. Similar specifications for another designed ADC, aimed for high-resolution applications, are 16.67MSPS, 113.5mW and 38.74dB, respectively. The ADCs are designed and simulated in UMC 0.18µm CMOS technology. using Mentor Graphics Custom IC Design tool set.

Current-mode CMOS pipelined ADC

A novel dual band compact near to edge located via-comb shape EBG (NELV-CEBG) has been proposed and its compactness has been studied. A good reduction level of 8–21 dB has been observed when 7×3 matrix of the proposed structure has been applied to enhance the isolation between the patch antenna arrays operating over WIMAX band.

Jayanta Mukherjee

Papers

An Inductorless Noise Cancelling Wideband Balun LNA with Dual Shunt Feedback and Current Reuse

Mutual coupling reduction using variable length srr like structure in ultra wideband MIMO antennas

A 1–11 GHz ultra‐wideband LNA using M‐derived inductive peaking circuit in UMC 65 nm CMOS

Current-mode CMOS pipelined ADC

A novel compact comb shaped EBG structure for coupling reduction in WIMAX band