Radio frequency (RF) energy transfer and harvesting techniques have recently become alternative methods to power the next-generation wireless networks As this emerging technology enables proactive energy replenishment of wireless devices, it is advantageous in supporting applications with quality-of-service requirements In this paper, we present a comprehensive literature review on the research progresses in wireless networks with RF energy harvesting capability, which is referred to as RF energy harvesting networks (RF-EHNs) First, we present an overview of the RF-EHNs including system architecture, RF energy harvesting techniques, and existing applications Then, we present the background in circuit design as well as the state-of-the-art circuitry implementations and review the communication protocols specially designed for RF-EHNs We also explore various key design issues in the development of RF-EHNs according to the network types, ie, single-hop networks, multiantenna networks, relay networks, and cognitive radio networks Finally, we envision some open research directions

Wireless Networks With RF Energy Harvesting: A Contemporary Survey

A rating scale for drug-induced akathisia has been derived that incorporates diagnostic criteria for pseudoakathisia, and mild, moderate, and severe akathisia. It comprises items for rating the observable, restless movements which characterise the condition, the subjective awareness of restlessness, and any distress associated with the akathisia. In addition, there is an item for rating global severity. A standard examination procedure is recommended. The inter-rater reliability for the scale items (Cohen's kappa) ranged from 0.738 to 0.955. Akathisia was found in eight of 42 schizophrenic in-patients, and nine had pseudoakathisia, where the typical sense of inner restlessness was not reported.

A rating scale for drug-induced akathisia

An introduction to heat transfer

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

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Design Of Analog Cmos Integrated Circuits

A critical review of soil moisture measurement

In this letter, a broadband bent triangular omnidirectional antenna is presented for RF energy harvesting. The antenna has a bandwidth for ${\hbox {VSWR}}\leq2$ from 850 MHz to 1.94 GHz. The antenna is designed to receive both horizontal and vertical polarized waves and has a stable radiation pattern over the entire bandwidth. Antenna has also been optimized for energy harvesting application and it is designed for $100~\Omega $ input impedance to provide a passive voltage amplification and impedance matching to the rectifier. A peak efficiency of 60% and 17% is obtained for a load of $500~\Omega $ at 980 and 1800 MHz, respectively. At a cell site while harvesting all bands simultaneously a voltage of 3.76 V for open circuit and 1.38 V across a load of $4.3~\hbox{k} \Omega $ is obtained at a distance of 25 m using an array of two elements of the rectenna.

Broadband Bent Triangular Omnidirectional Antenna for RF Energy Harvesting

A differential microstrip antenna with improved gain for RF energy harvesting is presented in this paper. The developed antenna can be used in either center grounded or differential configuration. The antenna is designed and fabricated for GSM900 band (890–960 MHz). The antenna has a gain of 8.5 dBi at the center frequency and exhibits VSWR $\boldsymbol{\leq} 2$ for frequencies between 870 MHz to 1.05 GHz. The efficiency of the antenna is 80%. The developed antenna finds its application in energy harvesting, RFID tags and in wireless communication circuits, where differential inputs/outputs are needed. A complete differential RF energy harvesting system with a peak efficiency of 65.3% for a load of $3 {\mathbf{k}}\boldsymbol{\Omega}$ is also developed.

Differential Microstrip Antenna for RF Energy Harvesting

An experimental RF energy harvesting system to harvest energy from cell towers is presented in this paper. An electromagnetically-coupled square microstrip antenna is designed and fabricated for deployment in the presented system. Antenna gain of 9.1dB and bandwidth from 877 MHz to 998 MHz is achieved. A Schottky diode-based single stage voltage doubler and six-stage voltage doubler has also been designed and fabricated for DC voltage generation. Measured results show that a voltage of 2.78V is obtained at a distance of 10m from the cell tower and a voltage of 0.87V is obtained at a distance of 50m.

http://www.ncc.org.in/download.php?f=NCC2011/1569359597.pdf

RF energy harvesting system from cell towers in 900MHz band

Sub-20 nm gate length FinFETs, are constrained by the very thin fin thickness (TFIN) necessary to maintain acceptable short-channel performance. For the 45 nm technology node and below, a novel device design methodology for undoped underlapped FinFETs with high-kappa spacers is presented to achieve higher circuit speed and SRAM cells with higher stability, lower leakage, faster access times and higher robustness to process variations compared to overlapped FinFETs. While comparing different FinFETs, we propose ON-current per fin as the parameter to be optimized instead of ON-current normalized to electrical width.

Maryam Shojaei Baghini

Papers

A critical review of soil moisture measurement

Broadband Bent Triangular Omnidirectional Antenna for RF Energy Harvesting

Differential Microstrip Antenna for RF Energy Harvesting

RF energy harvesting system from cell towers in 900MHz band

Sub-20 nm gate length FinFET design: Can high-κ spacers make a difference?