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Design Of Analog Cmos Integrated Circuits

In general, Micropower Impulse Radar (MIR) depends on Ultra-Wideband (UWB) transmission systems. UWB technology can supply innovative new systems and products that have an obvious value for radar and communications uses. Important applications include bridge-deck inspection systems, ground penetrating radar, mine detection, and precise distance resolution for such things as liquid level measurement. Most of these UWB inspection and measurement methods have some unique qualities, which need to be pursued. Therefore, in considering changes to Part 15 the FCC needs to take into account the unique features of UWB technology. MIR is applicable to two general types of UWB systems: radar systems and communications systems. Currently LLNL and its licensees are focusing on radar or radar type systems. LLNL is evaluating MIR for specialized communication systems. MIR is a relatively low power technology. Therefore, MIR systems seem to have a low potential for causing harmful interference to other users of the spectrum since the transmitted signal is spread over a wide bandwidth, which results in a relatively low spectral power density.

/pdf/response-to-fcc-98-208-notice-of-inquiry-in-the-matter-of-3attixctl7.pdf

Response to FCC 98-208 notice of inquiry in the matter of revision of part 15 of the commission's rules regarding ultra-wideband transmission systems

Resonance conditions for a substrate-superstrate printed antenna geometry which allow for large antenna gain are presented. Asymptotic formulas for gain, beamwidth, and bandwidth are given, and the bandwidth limitation of the method is discussed. The method is extended to produce narrow patterns about the horizon, and directive patterns at two different angles.

Gain enhancement methods for printed circuit antennas

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Design Of Integrated Circuits For Optical Communications

This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems. The chapters on low-noise amplifiers, oscillators and phase noise have been significantly expanded as well. The chapter on architectures now contains several examples of complete chip designs that bring together all the various theoretical and practical elements involved in producing a prototype chip. First Edition Hb (1998): 0-521-63061-4 First Edition Pb (1998); 0-521-63922-0

The Design of CMOS Radio-Frequency Integrated Circuits: RF CIRCUITS THROUGH THE AGES

A novel half Hemispherical Dielectric Resonator Antenna (HDRA) with an array of slots has been designed. The dielectric material used is Rogers TMM10, which is a ceramic thermoset polymer composite material having a dielectric constant of "r = 9:2. Periodic holes lower down the Q factor of the antenna and hence enhance the impedance bandwidth. The measured value of the 10dB bandwidth is close to 1GHz (»17.74%). The mode investigated is a TM101 like mode. Further, the efiect of increasing the probe length on the resonance and the radiation pattern is also studied. As the probe length is increased, a shift in the resonant frequency is observed and the Dielectric Resonator Antenna (DRA) behaves as a monopole antenna loaded with the DRA. The experimental results conflrm that a wide bandwidth of 1.3GHz (»29%) with a high gain of 7.2dBi can be obtained. The radiation pattern of such an antenna is directive in nature.

https://www.jpier.org/PIERC/pierc36/17.12122002.pdf

A Novel Half Hemispherical Dielectric Resonator Antenna with Array of Slots for Wideband Applications

This article highlights the effect of superstrate material on a high-gain antenna using array of parasitic patches for wireless applications. The antenna structure consists of a microstrip antenna, which feeds an array of square parasitic patches fabricated on a ceramic or FR4 superstrate. The patches on a superstrate are suspended in air at λ0/2. The spacing between parasitic patches and patch dimensions decrease with dielectric constant and, thus, a compact antenna with almost same gain can be designed with high dielectric superstrate. The structures with 5 × 5 array of square parasitic patches provide a gain of 17.5 dB on infinite ground plane in both the cases but the array dimension is 55 × 55 mm2 in ceramic as compared to 115 × 115 mm2 Antenna with ceramic superstrate on finite ground requires 25% less ground plane size as compared to FR4. Structure with FR4 superstrate is designed, fabricated, and tested. The measured VSWR is <2 over 5.725–5.875 GHz frequency band. The antenna with 5 × 5 array of square parasitic patches provides a gain of 18.0 dB with 92% efficiency, SLL of −18.4 dB, and front to back lobe ratio of more than 20 dB. The proposed structure can be packaged inside an application platform. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 82–88, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24850

Effect of superstrate material on a high-gain antenna using array of parasitic patches

This article proposes a low cost efficient high gain antenna using array of parasitic patches for wireless applications. The antenna structure consists of a microstrip antenna which feeds an array of square parasitic patches fabricated on a low cost FR4 superstrate. The patches on superstrate are suspended in air at λ0/2. The structure with 5 × 5 array of square parasitic patches is designed, fabricated, and tested. The measured voltage standing wave ratio (VSWR) is <2 over 5.725–5.875 GHz frequency band. The antenna with a single square patch provides a gain of 12.6 dB, whereas the antenna with 5 × 5 array of square parasitic patches provides a gain of 18.0 dB with 92% efficiency, SLL of −18.4 dB and front to back lobe ratio of more than 20 dB. The proposed structure can be packaged inside an application platform. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 733–739, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24156

Low cost efficient high gain antenna using array of parasitic patches on a superstrate layer

A self-biased CMOS analog mixer for ultra-wideband (UWB) applications is presented in this paper. The proposed mixer is complementary and self-biased, and has lower power consumption, superior isolation, and larger bandwidth. The proposed low-power, down conversion mixer is designed and fabricated in UMC $0.18\mu \text{m}$ CMOS technology. The measurement results show that it can operate at UWB frequencies that range from 1 to 6 GHz. The proposed mixer provides a maximum conversion gain of 13 dB, −4.5 dBm of third-order input intercept point, and a minimum double sideband noise figure of 12 dB. The maximum values of the measured local oscillator LO-to-RF, RF-to-IF, and LO-to-IF isolations are 50, 45, and 52 dB, respectively.

A Self-Biased Mixer in $0.18\mu \text{m}$ CMOS for an Ultra-Wideband Receiver

In this paper, a compact, high efficiency TM01 to TE11 mode converter is presented. In the proposed structure, dielectric material is loaded below a tapered centre conductor, in lower section of a circular waveguide. The input TM01 mode is initially transformed to TEM mode by the tapered centre conductor. The loaded dielectric material is designed to provide the desired phase shift for the mode conversion. Different dielectric materials are analyzed for loading to achieve high conversion efficiency and wide bandwidth. The proposed mode converter is fabricated with PTFE as dielectric for mode conversion and the results are verified through far field radiation pattern measurements. The mode conversion efficiency is more than 90% for 2.95-3.60 GHz band. Due to compactness and high conversion efficiency for wide bandwidth, it is suitable for S-band high power microwave (HPM) applications.

Jayanta Mukherjee

Papers

A Novel Half Hemispherical Dielectric Resonator Antenna with Array of Slots for Wideband Applications

Effect of superstrate material on a high-gain antenna using array of parasitic patches

Low cost efficient high gain antenna using array of parasitic patches on a superstrate layer

A Self-Biased Mixer in $0.18\mu \text{m}$ CMOS for an Ultra-Wideband Receiver

Dielectric loaded tm 01 to te 11 mode converter for S-band applications