J
Jenö Dr. Tihanyi
Researcher at Siemens
Publications - 73
Citations - 1492
Jenö Dr. Tihanyi is an academic researcher from Siemens. The author has contributed to research in topics: Field-effect transistor & Power semiconductor device. The author has an hindex of 16, co-authored 73 publications receiving 1471 citations. Previous affiliations of Jenö Dr. Tihanyi include Infineon Technologies.
Papers
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Proceedings ArticleDOI
A new generation of high voltage MOSFETs breaks the limit line of silicon
TL;DR: In this article, the authors proposed a new device concept for high voltage power devices based on charge compensation in the drift region of the transistor, which achieved a shrink factor of 5 versus the actual state of the art in power MOSFETs.
Patent
Field effect-controlled semiconductor component
TL;DR: The claimed field effect-controlled semiconductor component has a drain zone of the first conduction type, at least one gate electrode made of polycrystalline silicon and insulated from the drain zone, and a source region of the second conduction types built into the drain region as mentioned in this paper.
Journal ArticleDOI
Influence of the floating substrate potential on the characteristics of ESFI MOS transistors
TL;DR: In this article, a model is proposed to explain the anomalous currentvoltage characteristics of ESFI MOS transistors, and a computer program is developed to simulate the I D (U D ) characteristics of the transistors of the enhancement type.
Patent
Mosfet switch with an inductive load
Josef Dipl.-Ing. Einzinger,Christine Fellinger,Ludwig Dipl.-Ing. Leipold,Jenö Dr. Tihanyi,Roland Dipl.-Ing. Weber +4 more
TL;DR: In this article, a series connection of an additional MOSFET and a Zener diode between the gate of the power MOSFC and the connection of the load which is remote from the power MC was proposed.
Proceedings ArticleDOI
Functional integration of power MOS and bipolar devices
TL;DR: In this paper, the SIPMOS (Siemens Power MOS) technique is eminently suitable for this purpose and the development of vertical power MOSFETs has made it possible for MOS and bipolar functions to be combined advantageously.