Proceedings ArticleDOI
Functional integration of power MOS and bipolar devices
Jenö Dr. Tihanyi
- pp 75-78
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TLDR
In this paper, the SIPMOS (Siemens Power MOS) technique is eminently suitable for this purpose and the development of vertical power MOSFETs has made it possible for MOS and bipolar functions to be combined advantageously.Abstract:
The development of vertical power MOSFETs has made it possible for MOS and bipolar functions to be combined advantageously. The SIPMOS (Siemens Power MOS) technique is eminently suitable for this purpose. Vertical MOSFET-triggered thyristors, optically coupled lateral thyristors with MOS input and optically coupled MOS triacs have been implemented and investigated. The common advantages of functionally integrated MOS-bipolar structures are the high input sensitivity, high dV/dt immunity and excellent di/dt capability.read more
Citations
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Journal ArticleDOI
The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device
TL;DR: In this paper, a three-terminal power device, called the insulated gate transistor (IGT), with voltage-controlled output characteristics is described, where the best features of the existing families of bipolar devices and power MOSFET's are combined to achieve optimal device characteristics for low-frequency power-control applications.
Proceedings ArticleDOI
The insulated gate rectifier (IGR): A new power switching device
TL;DR: In this paper, a new power semiconductor device called the Insulated Gate Rectifier (IGR) is described, which has the advantages of operating at high current densities while requiring low gate drive power.
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The COMFET—A new high conductance MOS-gated device
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Journal ArticleDOI
MOS-Controlled thyristors—A new class of power devices
TL;DR: In this article, a new class of power devices based on an optimal combination of MOS and thyristor elements is described, which can switch from on-to-off or off-toon by applying a voltage to its MOS gate.
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References
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Proceedings ArticleDOI
A FET-controlled thyristor in SIPMOS technology
TL;DR: The SIPMOS (Siemens Power MOS) technology was developed for power MOSFETs as well as a. c. power switches in which MOS technology is functionally combined with bipolar devices as mentioned in this paper.
Proceedings ArticleDOI
A MOS-controlled triac device
B. Scharf,James D. Plummer +1 more
TL;DR: In this article, an insulated gate triac was developed and modeled for analysis and design using a circuit analysis program combining MOS and bipolar capabilities for crosspoint switches, power control and microprocessor interface.
Patent
FET Controlled thyristor
TL;DR: In this paper, a controlled semiconductor switch with a thyristor structure having a first zone of first conductivity type embedded in coplanar relationship in a second zone of second conductivities type, and also containing a third zone of the first conductivities and a fourth zone of 2.5 conductivities, is presented, where the control electrode lies on the insulating layer and covers a first channel zone associated with the FET.