Showing papers by "Jérémie Grisolia published in 1999"
01 Jan 1999-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this paper, the defects formed by ion implantation in SiC for a large variety of experimental conditions were investigated and a statistical analysis of digital images was performed to extract the depth-distributions of the defects.
Abstract: We have undertaken a systematic study of the defects formed by ion implantation in SiC for a large variety of experimental conditions. B, N, Al and Ne ions were implanted into 6H–SiC at room temperature RT and at 650°C. Multiple energy implants were carried out in order to obtain “flat” dopant profiles. The samples were annealed from 1100°C to 1750°C for various duration times. Transmission Electron Microscopy (TEM) analysis was carried out on cross-sectional samples using weak beam dark field imaging conditions. All these defects are of interstitial type (clusters or loops). A statistical analysis of digital images was performed to extract the depth-distributions of the defects. The depth-distributions were compared with Monte-Carlo simulations of the ion implantation process. It is shown that when implanted at RT, the defect distributions follow the “damage” profiles i.e., defects appear in regions where atomic displacements occur in the target. In contrast, the defects found after implantation at 650°C always mirror the “range” profile before and after annealing. We show that there is a concentration threshold under which no defect appear. These results are discussed in terms of point defect annihilation, clustering and dopant activation in SiC.
18 citations
TL;DR: In this article, a physico-chemical and electrical characterisation of nitrogen ion implantations in SiC epitaxies using a large variety of experimental conditions was carried out, where the samples were implanted either at room temperature (RT) or at 650°C (HT).
Abstract: We have undertaken a physico-chemical and electrical characterisation of nitrogen ion implantations in SiC epitaxies using a large variety of experimental conditions. The samples were implanted either at room temperature (RT) or at 650°C (HT). SIMS measurements were done to compare the depth-distributions with results from TRIM92 simulations. Transmission electron microscope (TEM) analysis of these samples was carried out on cross-sectional samples using Weak Beam Dark Field imaging conditions. Van der Pauw test patterns were realised to extract the thermal dependencies of resistivity and mobility. A comparison with the conductivity and mobility obtained on films doped during epitaxy and implanted films is done. It is shown that, in the lower dose range, the ionisation and activation does not depend on the implantation temperature.
4 citations