J
Jiajun Luo
Researcher at Chinese Academy of Sciences
Publications - 98
Citations - 290
Jiajun Luo is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Silicon on insulator & Transistor. The author has an hindex of 7, co-authored 89 publications receiving 206 citations.
Papers
More filters
Journal ArticleDOI
An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure
Yang Huang,Binhong Li,Xing Zhao,Zhongshan Zheng,Jiantou Gao,Gang Zhang,Bo Li,Guohe Zhang,Kai Tang,Zhengsheng Han,Jiajun Luo +10 more
TL;DR: In this article, double SOI was introduced to mitigate the radiation impact on fully depleted silicon-on-insulator (FDSOI) devices, and the impact of negative back-gate bias to transistor parameter degradation was investigated, and an improved backgate compensation strategy was proposed.
Journal ArticleDOI
Total Ionizing Dose Response and Annealing Behavior of Bulk nFinFETs With ON-State Bias Irradiation
Ling Yang,Qingzhu Zhang,Yunbo Huang,Zhongshan Zheng,Bo Li,Binhong Li,Xingyao Zhang,H. Zhu,Huaxiang Yin,Qi Guo,Jiajun Luo,Zhengsheng Han +11 more
TL;DR: In this paper, the effect of trapped charges in the gate oxide and shallow trench isolation (STI) oxide on the threshold voltage and transconductance of the devices was analyzed for on-state bias condition.
Proceedings ArticleDOI
Improved single-event hardness of trench power MOSFET with a widened split gate
TL;DR: In this paper, a new 200V power MOSFET structure with a widened split gate trench to enhance single-event radiation hardness is proposed and studied by numerical simulation, which not only offers a great Rds(on)×Q gd FOM, but also 55.3% wider radiation-hard Safe Operating Area (RHSOA) than the conventional trench and split gate structure.
Journal ArticleDOI
Multiple Angle Analysis of 30-MeV Silicon Ion Beam Radiation Effects on InGaN/GaN Multiple Quantum Wells Blue Light-Emitting Diodes
Lei Wang,Ningyang Liu,Ligang Song,Bo Li,Yanqiu Liu,Cui Yan,Binhong Li,Zhongshan Zheng,Zhitao Chen,Zheng Gong,Wei Zhao,Xingzhong Cao,Baoyi Wang,Jiajun Luo,Zhengsheng Han +14 more
TL;DR: In this article, the degradation mechanism of InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) under silicon ion irradiation was investigated.
Journal ArticleDOI
Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET
TL;DR: In this article, the authors investigate the single event transient (SET) occurring in partially depleted silicon-on-insulator (PDSOI) metal-oxide-semiconductor (MOS) devices irradiated by pulsed laser beams.