Z
Zhengsheng Han
Researcher at Chinese Academy of Sciences
Publications - 133
Citations - 763
Zhengsheng Han is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Silicon on insulator & Single event upset. The author has an hindex of 10, co-authored 112 publications receiving 568 citations.
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Low-temperature nitriding of 38CrMoAl steel with a nanostructured surface layer induced by surface mechanical attrition treatment
TL;DR: In this paper, a nanocrystalline surface layer was fabricated on a 38CrMoAl steel plate by means of a surface mechanical attrition treatment (SMAT), and the average grain size in the top surface layer (10 pm thick) is about 10 nm, and the grain size stability can be maintained up to 450 degrees C. The results of the investigation showed that this new gas nitriding technique can effectively increase the hardness and wear resistance of the resulting surface layer in comparison with conventional gas n-riding, demonstrating a significant advancement for materials processing.
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Grain size effect on wear resistance of a nanostructured AISI52100 steel
TL;DR: In this article, the sliding wear resistance of a nanostructured spheroidal steel varies with grain size: it increases when the grain size of the ferrite phase (Dα) increases from 8 to 32, and decreases with a further increase in Dα.
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Wear mechanism transition dominated by subsurface recrystallization structure in Cu–Al alloys
TL;DR: In this article, the wear volume of Cu-Al alloys decreases with an increasing Al content below 0.5 Wt, and increases with higher Al contents above 0.2 Wt.
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The Impact of X-Ray and Proton Irradiation on ${\rm HfO}_2/{\rm Hf}$ -Based Bipolar Resistive Memories
Jinshun Bi,Zhengsheng Han,En Xia Zhang,Michael W. McCurdy,Robert A. Reed,Ronald D. Schrimpf,Daniel M. Fleetwood,Michael L. Alles,Robert A. Weller,D. Linten,Malgorzata Jurczak,Andrea Fantini +11 more
TL;DR: In this paper, the authors investigated total ionizing dose effects on the electrical characteristics of HfO2/Hf-based bipolar resistive-random access memory (RRAM) devices.
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Enhancing wear resistance of Cu–Al alloy by controlling subsurface dynamic recrystallization
Xiang Chen,Zhengsheng Han,K. Lu +2 more
TL;DR: The sliding wear resistance of Cu-2.2 wt.% Al alloy can be remarkably enhanced by controlling subsurface dynamic recrystallization (DRX) process as discussed by the authors.