J
Jian Chen
Researcher at Southeast University
Publications - 16
Citations - 121
Jian Chen is an academic researcher from Southeast University. The author has contributed to research in topics: Breakdown voltage & High voltage. The author has an hindex of 6, co-authored 15 publications receiving 91 citations.
Papers
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Journal ArticleDOI
A Review of Superjunction Vertical Diffused MOSFET
TL;DR: Superjunction has arguably been the most creative and important concept in power device field Superjunction vertical diffused MOSFET (SJ VDMOS) has been commercialized and the research effort to l
Journal ArticleDOI
Low-Loss SOI-LIGBT With Triple Deep-Oxide Trenches
Long Zhang,Jing Zhu,Weifeng Sun,Minna Zhao,Jiajun Chen,Xuequan Huang,Longxing Shi,Jian Chen,Desheng Ding +8 more
TL;DR: The experiments demonstrate that the proposed TDOT SOI-LIGBT achieves turn- off loss, indicating a smaller number of stored carries at the collector side and thereby a faster turn-off in the proposedTDOT SoI- LIGBT.
Journal ArticleDOI
A U-Shaped Channel SOI-LIGBT With Dual Trenches
Long Zhang,Jing Zhu,Weifeng Sun,Minna Zhao,Jiajun Chen,Xuequan Huang,Desheng Ding,Jian Chen,Longxing Shi +8 more
TL;DR: In this paper, a U-shaped channel silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) with dual trenches was proposed to reduce the turn-off loss while keeping the low ON-state voltage drop.
Journal ArticleDOI
Investigation on Self-Adjust Conductivity Modulation SOI-LIGBT Structure (SCM-LIGBT) for Monolithic High-Voltage IC
TL;DR: In this paper, a self-adjust conductivity modulation lateral insulated gate bipolar transistor (SCM-LIGBT) was proposed to improve the current capability and the forward voltage.
Patent
Anti-noise-interference high-voltage side gate driving circuit
TL;DR: In this paper, an anti-noise-interference high-voltage side gate driving circuit consisting of a highvoltage level shifting circuit, an RS latch and a driver was proposed.