Jiang Pu

TL;DR: The introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large-size WSe2 monolayer flakes or thin films can be successfully grown and the resistor-loaded inverter based on a WSe 2 film, with a gain of ∼13, further demonstrates its applicability for logic-circuit integrations.

TL;DR: The superior electrical performance and excellent pliability of MoS(2) films make them suitable for use in large-area flexible electronics.

TL;DR: In this paper, the introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large-size WSe2 monolayer flakes or thin films can be successfully grown.

TL;DR: The fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 is provided and is useful for guiding future designs in 2D material-based optoeLECTronic devices.

TL;DR: In this article, a stable and controllable p-doping technique on a WSe2 monolayer is presented, where a more p-typed WSe 2 field effect transistor is realized by electron transfer from the W Se2 to the gold (Au) decorated on the Wse2 surfaces.