J
Jing Kai Huang
Researcher at King Abdullah University of Science and Technology
Publications - 19
Citations - 5029
Jing Kai Huang is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Monolayer & Molybdenum disulfide. The author has an hindex of 16, co-authored 16 publications receiving 4180 citations. Previous affiliations of Jing Kai Huang include National Chiao Tung University & Academia Sinica.
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Journal ArticleDOI
High-gain phototransistors based on a CVD MoS₂ monolayer.
TL;DR: A phototransistor based on a chemical vapor deposited MoS2 monolayer exhibits a high photoresponsivity and an excellent photogain and the presence of shallow traps contributes to the persistent photoconductivity.
Journal ArticleDOI
Large-area synthesis of highly crystalline WSe2 monolayers and device applications
Jing Kai Huang,Jiang Pu,Chang Lung Hsu,Ming-Hui Chiu,Zhen-Yu Juang,Yung Huang Chang,Wen-Hao Chang,Yoshihiro Iwasa,Taishi Takenobu,Lain-Jong Li,Lain-Jong Li +10 more
TL;DR: The introduction of hydrogen in the reaction chamber helps to activate the selenization of WO3, where large-size WSe2 monolayer flakes or thin films can be successfully grown and the resistor-loaded inverter based on a WSe 2 film, with a gain of ∼13, further demonstrates its applicability for logic-circuit integrations.
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Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
Wenjing Zhang,Chih Piao Chuu,Jing Kai Huang,Chang-Hsiao Chen,Meng-Lin Tsai,Yung Huang Chang,Chi-Te Liang,Yu Ze Chen,Yu-Lun Chueh,Jr-Hau He,Mei-Yin Chou,Lain-Jong Li +11 more
TL;DR: It is demonstrated that a photodetector based on the graphene/MoS2 heterostructure is able to provide a high photogain greater than 108 and graphene is transferable onto MoS2.
Journal ArticleDOI
Wafer-Scale MoS2 Thin Layers Prepared by MoO3 Sulfurization
Yu-Chuan Lin,Wenjing Zhang,Jing Kai Huang,Jing Kai Huang,Keng-Ku Liu,Yi-Hsien Lee,Chi-Te Liang,Chih-Wei Chu,Lain-Jong Li,Lain-Jong Li +9 more
TL;DR: Spectroscopic, optical and electrical characterizations reveal that the obtained wafer-scale MoS(2) thin layers are polycrystalline and with semiconductor properties, which make such films suitable for flexible electronics or optoelectronics.
Journal ArticleDOI
Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection.
Yung Huang Chang,Wenjing Zhang,Yihan Zhu,Yu Han,Jiang Pu,Jan-Kai Chang,Wei Ting Hsu,Jing Kai Huang,Chang Lung Hsu,Ming-Hui Chiu,Taishi Takenobu,Henan Li,Chih-I Wu,Wen-Hao Chang,Andrew T. S. Wee,Lain-Jong Li +15 more
TL;DR: The fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 is provided and is useful for guiding future designs in 2D material-based optoeLECTronic devices.