Jing Zhu

TL;DR: In this article, the authors investigated the mechanism of reverse recovery failure in the lateral integrated Bootstrap Diode (BST-Diode) through physical TCAD simulation and proposed an optimized structure with several disconnected P+ dynamic field limiting rings (DFLR) at the anode side.

TL;DR: In this paper, a 500 V silicon-on-insulator (SOI) lateral pin diode is proposed, which features dual deep-oxide trenches (DDOTs) arranged in the i-layer.

TL;DR: A hyperconjugation longitudinal double-diffused metal oxide semiconductor tube comprises one or more of one tube units, each tube unit comprises drain electrode metal; an N-type heavily-doped silicon substrate taken as a drain area is arranged on the drain electrodes metal; a P-type doped columnar semiconductor area was arranged in the extension layer; a p-type heavy-dopened semiconductor body area was placed in the columnar area and is positioned in the N- type doped extension layer.

TL;DR: An N-type insulated gate bipolar transistor as mentioned in this paper includes a P-type doped silicon substrate which is also used as a collector region, and a collector metal is arranged beneath the P- type doped Silicon substrate.

TL;DR: In this article, the authors focus on the VGE overshoot phenomenon of the 1.2-kV Injection Enhanced Gate Transistor (IEGT) caused by the reverse gate capacitance displacement current during the turn on operation.