Superjunction has arguably been the most creative and important concept in the power device field since the introduction of the insulated gate bipolar transistor (IGBT) in the 1980s. It is the only concept known today that has challenged and ultimately proved wrong the well-known theoretical study on the limit of silicon in high-voltage devices. This paper deals with the history, device and process development, and the future prospects of Superjunction technologies. It covers fundamental physics, technological challenges as well as aspects of design and modeling of unipolar devices, such as CoolMOS. The superjunction concept is compared to other methods of enhancing the conductivity of power devices (from bipolar to employment of wide-bandgap materials) to derive its set of benefits and limitations. This paper closes with the application of the superjunction concept to other structures or materials, such as terminations, superjunction IGBTs, or silicon carbide Field Effect Transistors (FETs).

Superjunction Power Devices, History, Development, and Future Prospects

The present disclosure describes a methodology for wireless power transmission based on pocket-forming. This methodology may include one transmitter and at least one or more receivers, being the transmitter the source of energy and the receiver the device that is desired to charge or power. The transmitter may identify and locate the device to which the receiver is connected and thereafter aim pockets of energy to the device in order to power it. Pockets of energy may be generated through constructive and destructive interferences, which may create null-spaces and spots of pockets of energy ranged into one or more radii from transmitter. Such feature may enable wireless power transmission through a selective range, which may limit operation area of electronic devices and/or may avoid formation of pockets of energy near and/or over certain areas, objects and people.

Wireless power transmission with selective range

Configurations and methods of wireless power transmission for charging or powering one or more electronic devices inside a vehicle are disclosed. A transmitter capable of single or multiple pocket-forming may be connected to a car lighter, where this transmitter may include a circuitry module and an antenna array integrated within the transmitter, or operatively connected through a cable. This cable may allow the positioning of the antenna array in different locations inside the vehicle suitable for directing RF waves or pockets of energy towards one or more electronic devices. Transmitter's configuration can be accessed by one or more electronic devices through Bluetooth communication in order to set up charging or powering priorities.

Wireless charging and powering of electronic devices in a vehicle

The present disclosure may provide a wireless power system which may be used to provide wireless power transmission (WPT) while using suitable WPT techniques such as pocket-forming. Wireless power system may be used in a wireless powered house for providing power and charge to a plurality of mobile and non-mobile devices. Wireless powered house may include a single base station which may be connected to several transmitters. Base station may manage operation of every transmitter in an independently manner or may operate them as a single transmitter. Connection between base station and transmitters may be achieved through a plurality of techniques including wired connections and wireless connections.

Wireless powered house

Embodiments directed to providing health safety in a wireless power transmission systems are disclosed herein. One embodiment includes a processing apparatus with a processor; a data storage; and one or more wireless power transmitters each including at least two antennas. The one or more wireless power transmitters receive instructions from the processing apparatus that cause the transmitters to transmit RF waves that constructively interfere to provide wirelessly delivered power to one or more receivers. The processing apparatus receives and processes wireless power proscribing data for each respective receiver, respective wireless power proscribing data including at least one user-specified circumstance that a user inputs as to when a respective electronic device coupled with the respective receiver is in use; and the processing apparatus causes transmission of the RF waves by the transmitters in accordance with determining that the at least one user-specified circumstance is not present at the respective electronic device.

System and method for providing health safety in a wireless power transmission system

This paper proposes a U-shaped channel silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) with dual trenches to reduce the turn-off loss while keep the low ON-state voltage drop. The device features a U-shaped gate trench (G1) and a U-shaped hole-barrier trench (G2). By introducing the dual trenches, enhanced carrier stored effect at the emitter side, more uniform carrier distribution in the drift region, and low carrier density at the collector are realized, resulting in decreases of ON-state voltage drop ( ${V}_{\mathrm{\scriptscriptstyle ON}}$ ) and turn-OFF loss ( ${E}_{\mathrm{\scriptscriptstyle OFF}})$ . The proposed SOI-LIGBT offers an ${E}_{\mathrm{\scriptscriptstyle OFF}}~52.3$ % lower than the conventional planar-gate U-shaped channel SOI-LIGBT at the same ${V}_{\mathrm{\scriptscriptstyle ON}}$ of 1.22 V. Moreover, the proposed SOI-LIGBT exhibits a latch-up free characteristic at the current density larger than 1200 A/cm2.

A U-Shaped Channel SOI-LIGBT With Dual Trenches

The invention relates to a rapid superjunction longitudinal double-diffusion metal oxide semiconductor transistor which comprises a cell area, a terminal area and a transition area, wherein the terminal area is arranged at the outermost periphery of a chip; the transition area is positioned between the cell area and the terminal area; the bottoms of the cell area, the transition area and the terminal area (III) are provided with drain electrode metal; a heavy doping n-type silicon substrate is arranged on the drain electrode metal and used as a drain area of the chip; an n-type doping epitaxial layer is arranged on the heavy doping n-type silicon substrate; and a discontinuous p-type doping columnar semiconductor area is arranged in the n-type doping epitaxial layer The rapid superjunction longitudinal double-diffusion metal oxide semiconductor transistor is characterized in that an n-type heavy doping semiconductor area is arranged in a second p-type doping semiconductor area in thetransition area, and the surface of the n-type heavy doping semiconductor area is provided with a contact hole which is connected with a metal layer to form a ground contact electrode of the chip The invention can effectively reduce the reverse recovery charge of a device and improve the reverse recovery characteristics under the conditions of not increasing the process cost or changing the mainparameter of the device

Rapid superjunction longitudinal double-diffusion metal oxide semiconductor transistor

The invention discloses an under-voltage protection method of a high-voltage half-bridge driving chip and a high-voltage half-bridge circuit. According to the method, when low-side power voltage VCC is lacking, an under-voltage protection circuit blocks high-end and low-end signal channels; if the low-side power voltage VCC is greater than a low-side under-voltage threshold VCCU and high-side power voltage VBS is smaller than a high-side under-voltage threshold VBSU, low level is forcedly output from a high-side channel of the high-voltage half-bridge driving chip, and high level is output from a low-side channel; an upper power tube is closed, and a lower power tube is opened, so the low-side power voltage VCC charges a bootstrap capacitor CB through an external diode until the high-side power voltage VBS is greater than the high-side under-voltage threshold VBSU; and the high-side power voltage and the low-side power voltage are greater than the high-side under-voltage threshold and the low-side under-voltage threshold, and the high-voltage half-bridge driving chip normally works. A circuit comprises the high-voltage half-bridge circuit, the upper power tube M1, the lower power tube M2, the diode DB and the bootstrap capacitor CB.

Under-voltage protection method of high-voltage half-bridge driving chip and high-voltage half-bridge circuit

The invention relates to a semiconductor tube of hyperconjugation longitudinal double diffusion metal oxide with N channels, comprising an N-type doped silicon substrate which is also used as a drain region, an N-type doped silicon epitaxial layer, a primitive cell region and a terminal region arranged at the periphery of the primitive cell region; the N-type doped silicon epitaxial layer is arranged on the N-type doped silicon substrate; the primitive cell region and the terminal region are arranged on the N-type doped silicon epitaxial layer; the terminal region comprises a first hyperconjugation structure and an N-type silicon doped semiconductor region, wherein the first hyperconjugation structure comprises a P-type column and a N-type column; an N-type heavily doped semiconductor region is arranged in the N-type silicon doped semiconductor region; the first hyperconjugation structure and the N-type silicon doped semiconductor region are respectively provided with a field oxidation layer; and the N-type heavily doped semiconductor region is connected with a metal layer The semiconductor tube is characterized in that the first hyperconjugation structure and the N-type silicon doped semiconductor region are respectively provided with the field oxidation layer

Semiconductor tube of hyperconjugation longitudinal double diffusion metal oxide with N channels

A novel composite device structure named self-adjust conductivity modulation lateral insulated gate bipolar transistor (SCM-LIGBT), including normal LIGBT region (NLT region), the EM-nMOS region (ENM region), and the series diode region (DIO region), is proposed in this paper. By adding the enhanced-mode nMOS region and the series diodes region, the parasitic NPN transistor (NPN) bipolar structure in the normal LIGBT structure can be triggered in on-state and the conductivity modulation is dramatically enhanced, which leads to the improvement on the current capability and the forward voltage. In addition, due to the base voltage of the parasitic NPN bipolar structure in the proposed device can be clamped at the forward threshold of the series diodes, therefore the latch-up issues can be immunized to guarantee the forward-biased safe operating area. Numerous simulations and measurements are presented to investigate the electrical characteristics of the proposed structure. The length of the fabrication SCM-LIGBT is $78.5~\mu \text{m}$ , and the width of the DIO and NLT is 830 $\mu \text{m}$ , while the width of the ENM is $4100~\mu \text{m}$ . The results demonstrate that the proposed SCM-LIGBT achieves a high-current capability ( ${J}_{A})$ of 2428 A/cm2 at ${V}_{G}= 10$ V, a low on-state voltage drop of 1.15 V at ${J}_{A}= 150$ A/cm2 with its breakdown voltage of 590 V.

Jing Zhu

Papers

A U-Shaped Channel SOI-LIGBT With Dual Trenches

Rapid superjunction longitudinal double-diffusion metal oxide semiconductor transistor

Under-voltage protection method of high-voltage half-bridge driving chip and high-voltage half-bridge circuit

Semiconductor tube of hyperconjugation longitudinal double diffusion metal oxide with N channels

Investigation on Self-Adjust Conductivity Modulation SOI-LIGBT Structure (SCM-LIGBT) for Monolithic High-Voltage IC