J
Jingjing Lin
Researcher at Princeton University
Publications - 17
Citations - 1213
Jingjing Lin is an academic researcher from Princeton University. The author has contributed to research in topics: Weyl semimetal & Hall effect. The author has an hindex of 11, co-authored 16 publications receiving 910 citations.
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Journal ArticleDOI
Anomalous Hall effect in ZrTe 5
Tian Liang,Tian Liang,Tian Liang,Jingjing Lin,Quinn Gibson,Satya Kushwaha,Minhao Liu,Wudi Wang,Hongyu Xiong,Hongyu Xiong,Jonathan Sobota,Jonathan Sobota,Jonathan Sobota,Makoto Hashimoto,Patrick S. Kirchmann,Zhi-Xun Shen,Zhi-Xun Shen,Robert J. Cava,Nai Phuan Ong +18 more
TL;DR: In this article, the authors reported the results of experiments performed by in situ three-dimensional double-axis rotation to extract the full 4π solid angular dependence of the transport properties of Zirconium pentatelluride.
Journal ArticleDOI
Anomalous Hall Effect in ZrTe5
Tian Liang,Jingjing Lin,Quinn Gibson,Minhao Liu,Wudi Wang,Hongyu Xiong,Jonathan Sobota,Makoto Hashimoto,Patrick S. Kirchmann,Zhi-Xun Shen,R. J. Cava,N. P. Ong +11 more
TL;DR: In this paper, an anomalous Hall effect (AHE) was detected for every sample, with no magnetic ordering observed in the system to the experimental sensitivity of torque magnetometry.
Journal ArticleDOI
Anomalous Nernst Effect in the Dirac Semimetal Cd3As2
Tian Liang,Jingjing Lin,Quinn Gibson,Tong Gao,Max Hirschberger,Minhao Liu,R. J. Cava,Nai Phuan Ong +7 more
TL;DR: In a field, the quantum oscillations of bulk states display a beating effect, suggesting that the Dirac nodes split into Weyl states, allowing the Berry curvature to be observed as an anomalous Nernst effect.
Journal ArticleDOI
Experimental Tests of the Chiral Anomaly Magnetoresistance in the Dirac-Weyl Semimetals Na3Bi and GdPtBi
TL;DR: In this paper, a new experimental test confirms evidence for a chiral anomaly in two Dirac-Weyl semimetals, excluding possible confusion with a classical effect known as current jetting.
Journal ArticleDOI
Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties.
Satya Kushwaha,Ivo Pletikosic,Tian Liang,Andras Gyenis,Saul H. Lapidus,Yao Tian,He Zhao,Kenneth S. Burch,Jingjing Lin,Wudi Wang,Huiwen Ji,Alexei V. Fedorov,Ali Yazdani,Nai Phuan Ong,Tonica Valla,R. J. Cava +15 more
TL;DR: This work characterize Sn-BSTS via angle-resolved photoemission spectroscopy, scanning tunnelling microscopy, transport studies, X-ray diffraction and Raman scattering, presenting this material as a high-quality topological insulator that can be reliably grown as bulk single crystals and thus studied by many researchers interested in topological surface states.