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Jiong Yang

Researcher at Shanghai University

Publications -  61
Citations -  3995

Jiong Yang is an academic researcher from Shanghai University. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 26, co-authored 47 publications receiving 3404 citations. Previous affiliations of Jiong Yang include Chinese Academy of Sciences & University of Washington.

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Multiple-filled skutterudites: high thermoelectric figure of merit through separately optimizing electrical and thermal transports.

TL;DR: The results firmly show that high power factors can be realized by adjusting the total filling fraction of fillers with different charge states to reach the optimum carrier density, and lattice thermal conductivity can also be significantly reduced, to values near the glass limit of these materials.
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Evaluation of Half‐Heusler Compounds as Thermoelectric Materials Based on the Calculated Electrical Transport Properties

TL;DR: A theoretical evaluation of the thermoelectric-related electrical transport properties of 36 half-Heusler (HH) compounds, selected from more than 100 HHs, is carried out in this paper.
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On the Design of High-Efficiency Thermoelectric Clathrates through a Systematic Cross-Substitution of Framework Elements

TL;DR: In this article, the Zintl-Klemm rule is demonstrated to be valid for Ni, Cu, and Zn transition metal substitution in the framework of type I clathrates and offers many degrees of freedom for material modification, design, and optimization.
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Improving thermoelectric performance of caged compounds through light-element filling

TL;DR: In this paper, the authors show an opposite example of filling a light element, Na, into CoSb3 for obtaining high thermoelectric figure of merit ZT.
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Chemical bonding, conductive network, and thermoelectric performance of the ternary semiconductors Cu2SnX3(X=Se,S) from first principles

TL;DR: In this article, the authors demonstrate the existence of a 3D hole conductive network in these ternary diamond-like Cu${}_{2}$Sn${X}_{3}$ ($X$ $=$ Se, S) semiconductors using ab initio calculations, and identify the features of the electronic structure responsible for this good performance.