Jo Robbelein

TL;DR: In this article, a new implantation-free lift-off process is presented, where a layer with mismatched thermal expansion coefficient with respect to the substrate is deposited, and upon cooling, the differential contraction induces a large stress field which is released by the initiation and the propagation of a crack parallel to the surface.

TL;DR: In this article, a simple analytical method is presented to perform a power-loss analysis of high-efficiency silicon Interdigitated Back Contact (IBC) solar cells, which assumes one-dimensional current flows for both minority and majority carriers, as well as a constant gradient (or linear profile) of minority carrier concentration from the front to the back of the solar cell.

TL;DR: In this paper, the use of industrial-oriented screen-printed aluminum-alloyed emitter for high-efficiency n-type interdigitated back-contact silicon solar cells was demonstrated.

TL;DR: In this paper, the authors present the development of single step processes and their integration into a baseline for the lab scale manufacturing of high efficiency IBC cells, including cleaning, oxidation, boron and phosphorous doping.

TL;DR: In this article, B implanted emitters are investigated in the back junction cell configuration and their material properties are tested in double side implanted Si wafers, where BnIm clusters formation is correlated with lifetime degradation.