John Kouvetakis

TL;DR: In this paper, a scaling behavior for the electronic properties that is the analog of the scaling behavior found earlier for the vibrational properties was found for the optical transitions in the alloys, which is not predicted by electronic structure calculations within the virtual crystal approximation.

TL;DR: In this article, the binding energies of 1s electrons (ESCA) for B, C and N indicate that each graphite-like sheet is a composite of all three elements.

TL;DR: In this paper, a class of Si-based semiconductors in the Ge1−xSnx system is described, which is completely characterized by Rutherford backscattering, low-energy secondary ion mass spectrometry, high-resolution transmission electron microscopy, x-ray diffraction (rocking curves), as well as infrared and Raman spectroscopies and spectroscopic ellipsometry.

TL;DR: In this article, a new class of Sn-containing group IV semiconductors are described, which exhibit unprecedented thermal stability, superior crystallinity and unique optical and strain properties such as adjustable bandgaps, and controllable strain states.

TL;DR: In this paper, the authors used a thermal decomposition of the precursors via elimination of SiMe{sub 3}F and SiMe[sub 3]Cl at 400-500 degrees C.