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John Kouvetakis

Researcher at Arizona State University

Publications -  319
Citations -  9029

John Kouvetakis is an academic researcher from Arizona State University. The author has contributed to research in topics: Chemical vapor deposition & Band gap. The author has an hindex of 49, co-authored 314 publications receiving 8533 citations. Previous affiliations of John Kouvetakis include IBM & Arizona's Public Universities.

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Synthesis of LiBC4N4, BC3N3, and Related C−N Compounds of Boron: New Precursors to Light Element Ceramics

TL;DR: The synthesis of a novel framework cyanide with composition LiBC4N4 (1) is described in this article, which consists of two interpenetrating diamond-like networks of BC4 and LiN4 tetrahedra linked by C−N bonds.
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Optical and structural properties of SixSnyGe1−x−y alloys

TL;DR: In this paper, the authors derived a quantitative description of the composition dependence of the lattice parameters of SixGe1−x and SixSnyGe 1−x−y binary data and derived dielectric functions indicating a band structure consistent with highly crystalline semiconductor materials of diamond symmetry.
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Experimental and theoretical study of deviations from Vegard's law in the SnxGe1-x system

TL;DR: First principles density functional theory is used to study the compositional dependence of the structural, elastic, electronic, and bonding properties of newly prepared SnxGe1-x alloys and compoun...
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Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and si-based optoelectronics

TL;DR: It is shown that Ge(1-x-y)Si(x)Sn(y) alloys serve as higher-gap barrier layers for the formation of light emitting structures based on Ge-Ge-Sn quantum wells grown on Si, thus representing a viable starting point en route to a complete four-junction photovoltaic device.
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High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon

TL;DR: Ge/Si heterostructure diodes based on n++Si(100)/i-Ge/p-Ge and p++Si (100)/I-Ge/(p)-Ge stacks and intrinsic region thickness of ~350 and ~900 nm, respectively, were fabricated using a specially developed synthesis protocol that allows unprecedented control of film microstructure, morphology, and purity at complementary metal-oxide-semiconductor compatible conditions.