J
John Kouvetakis
Researcher at Arizona State University
Publications - 319
Citations - 9029
John Kouvetakis is an academic researcher from Arizona State University. The author has contributed to research in topics: Chemical vapor deposition & Band gap. The author has an hindex of 49, co-authored 314 publications receiving 8533 citations. Previous affiliations of John Kouvetakis include IBM & Arizona's Public Universities.
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Simple chemical routes to diamond-cubic germanium-tin alloys
J. L. Taraci,John Tolle,John Kouvetakis,Martha R. McCartney,David J. Smith,Jose Menendez,M. A. Santana,M. A. Santana +7 more
TL;DR: In this article, a simple chemical route to growing Ge1−xSnx semiconductors using ultrahigh-vacuum chemical vapor deposition and the molecular precursor (Ph)SnD3 as the source of Sn atoms was described.
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Nonlinear structure-composition relationships in the Ge1-ySny/Si(100) (y<0.15) system
TL;DR: The compositional dependence of the cubic lattice parameter in Ge1-ySny alloys has been revisited in this article, where the experimental bowing parameter for the relaxed lattice constant of the alloys is found to be θ = -0066 A.
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Surface and Interface Studies of GaN Epitaxy on Si(111) via ZrB 2 Buffer Layers
Yukiko Yamada-Takamura,Z. T. Wang,Yasunori Fujikawa,Takemaro Sakurai,Qi-Kun Xue,John Tolle,Po-Liang Liu,Andrew Chizmeshya,John Kouvetakis,Ignatius S. T. Tsong +9 more
TL;DR: In this paper, a lattice-matched ZrB(2) buffer layer was used for epitaxially growing gallium nitride films on Si(111) via a plasma-assisted molecular beam epitaxy.
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Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition
TL;DR: The emission properties of GeSn heterostructure pin diodes have been investigated in this article, where the authors showed that the Ge1−ySny alloy becomes a direct-gap material with a single defected interface to mitigate the deleterious effects of mismatch-induced defects.
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Scaling law for the compositional dependence of Raman frequencies in SnGe and GeSi alloys
TL;DR: In this article, the compositional dependence of the Ge-Ge Raman mode in SnGe alloys has been measured in samples grown on Si substrates using a chemical vapor deposition technique.