Journal ArticleDOI
TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon
TLDR
In this article, a new class of Sn-containing group IV semiconductors are described, which exhibit unprecedented thermal stability, superior crystallinity and unique optical and strain properties such as adjustable bandgaps, and controllable strain states.Abstract:
▪ Abstract New classes of Sn-containing group IV semiconductors are described. Novel CVD routes lead to growth of a broad range of Ge1−ySny alloys and compounds directly on Si substrates. The direct bandgap (E0) and optical transitions E0+Δ0, E1, E1+Δ1, E0′, and E2 of Ge1−ySny exhibit strong nonlinearities in the compositional dependence, and their bowing parameters correlate with those in Ge1 −xSix, suggesting a scaling behavior for the electronic properties. The Ge1−ySny films can be used as “virtual substrates” for the subsequent growth of Ge1−x−ySixSny ternaries. These are created for the first time and exhibit unprecedented thermal stability, superior crystallinity and unique optical and strain properties such as adjustable bandgaps, and controllable strain states (compressive, relaxed, and tensile). The synthesis of Ge1−x−ySixSny makes it possible to decouple strain and bandgap and adds new levels of flexibility to the design of group IV devices. The Ge-Si-Sn system also represents a new class of “d...read more
Citations
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Journal ArticleDOI
On-chip light sources for silicon photonics
TL;DR: Zhou et al. as discussed by the authors assess the three main contenders for on-chip light sources: erbium-based light sources, germanium-on-silicon lasers and III-V-based silicon lasers.
Journal ArticleDOI
GeSn p-i-n photodetector for all telecommunication bands detection
Shaojian Su,Buwen Cheng,Chunlai Xue,Wei Wang,Quan Cao,Haiyun Xue,Weixuan Hu,Guangze Zhang,Yuhua Zuo,Qiming Wang +9 more
TL;DR: Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated and are attractive for applications in both optical communications and optical interconnects.
Journal ArticleDOI
Band structure calculations of Si Ge Sn alloys: achieving direct band gap materials
TL;DR: In this article, the electronic structure of relaxed or strained Ge1−xSnx, and of strained Ge grown on relaxed Ge 1−x−ySixSny, was calculated by the self-consistent pseudo-potential plane wave method, within the mixed-atom supercell model of alloys, which was found to offer a much better accuracy than the virtual crystal approximation.
Journal ArticleDOI
Si–Ge–Sn alloys: From growth to applications
Stephan Wirths,Dan Buca,S. Mantl +2 more
TL;DR: In this paper, the transition from an indirect to a fundamental direct bandgap material will be discussed, and the most commonly used approaches, i.e., molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydride and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3.
Journal ArticleDOI
Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
Benjamin Vincent,Federica Gencarelli,Hugo Bender,Clement Merckling,Bastien Douhard,Dirch Hjorth Petersen,Ole Hansen,Henrik Hartmann Henrichsen,Johan Meersschaut,Wilfried Vandervorst,Marc Heyns,Roger Loo,Matty Caymax +12 more
TL;DR: In this paper, an atmospheric pressure-chemical vapor deposition technique was proposed to grow metastable GeSn epitaxial layers on Ge substrates with Sn contents up to 8% and those metastable layers stay fully strained after 30min anneal in N2 at 500°C; Ge-Sn interdiffusion is seen at 500 °C but not at lower temperature.
References
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Journal ArticleDOI
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Georg Kresse,Jürgen Furthmüller +1 more
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Journal ArticleDOI
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
Georg Kresse,Jürgen Furthmüller +1 more
TL;DR: A detailed description and comparison of algorithms for performing ab-initio quantum-mechanical calculations using pseudopotentials and a plane-wave basis set is presented in this article. But this is not a comparison of our algorithm with the one presented in this paper.
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Georg Kresse,Juergen Hafner +1 more
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Journal ArticleDOI
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