J
John Kouvetakis
Researcher at Arizona State University
Publications - 319
Citations - 9029
John Kouvetakis is an academic researcher from Arizona State University. The author has contributed to research in topics: Chemical vapor deposition & Band gap. The author has an hindex of 49, co-authored 314 publications receiving 8533 citations. Previous affiliations of John Kouvetakis include IBM & Arizona's Public Universities.
Papers
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Controlled striped phase formation on ultraflat Si(001) surfaces during diborane exposure
Jon-Fredrik Nielsen,Jonathan P. Pelz,Hiroki Hibino,Hiroki Hibino,C. W. Hu,Ignatius S. T. Tsong,John Kouvetakis +6 more
TL;DR: In this article, the authors used low-energy electron microscopy to study spontaneous step formation in "striped" domains on ultraflat Si(001)-(2×1) surfaces during B2H6 exposure at elevated temperatures.
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Nanostructure–Property Control in AlPSi3/Si(100) Semiconductors Using Direct Molecular Assembly: Theory Meets Experiment at the Atomic Level
TL;DR: In this paper, aberrationcorrected annular-dark-field imaging and atomic-column elemental mapping are applied to characterize bonding configurations and elemental distributions in this intriguing family of monocrystalline solids.
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Nanoscale assembly of silicon-like [Al(As 1 − x N x )] y Si 5 − 2 y alloys: Fundamental theoretical and experimental studies of structural and optical properties
L. Jiang,Patrick Sims,Gordon Grzybowski,Richard T. Beeler,Andrew Chizmeshya,David J. Smith,John Kouvetakis,Jose Menendez +7 more
TL;DR: In this paper, theoretical simulations of Al(As{1\ensuremath{-}x}$N${}_{3}$)Si-Si alloys, a new class of optoelectronic materials, confirm that these compounds are likely to be disordered via a mechanism that preserves the integrity of the constituent III-V-Si${}-Si, but randomizes their orientation in the average diamond lattice of the compound.
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Ordered Structures in Unstrained, Epitaxial Ge-Si-C Films
TL;DR: An ordered GeSi2 structure has been observed in layers of approximate composition of Si2Cx grown epitaxially on Si as mentioned in this paper, and the structure is formed by Ge−Si−Si ordering along the diamond direction to yield a new structure with P3m1 symmetry.
Journal Article
Epitaxial Growth of ZrB 2 (0001) on Si(111) for III-nitride Applications: A Review
John Tolle,John Kouvetakis,D. W. Kim,Subhash Mahajan,Andrew Chizmeshya,C. W. Hu,Abigail Bell,Fernando Ponce,Ignatius S. T. Tsong +8 more
TL;DR: In this paper, the growth behavior of epitaxial ZrB2(0001) films on Si(111) via the thermal decomposition of the unimolecular precursor Zr(BH4)4 studied in situ by low energy electron diffraction and low-energy electron microscopy, and ex situ by cross-sectional transmission electron microscope and atomic force microscopy.