We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

Band parameters for III–V compound semiconductors and their alloys

Over the past three decades a new spectroscopic technique with unique possibilities has emerged. Based on coherent and time-resolved detection of the electric field of ultrashort radiation bursts in the far-infrared, this technique has become known as terahertz time-domain spectroscopy (THz-TDS). In this review article the authors describe the technique in its various implementations for static and time-resolved spectroscopy, and illustrate the performance of the technique with recent examples from solid-state physics and physical chemistry as well as aqueous chemistry. Examples from other fields of research, where THz spectroscopic techniques have proven to be useful research tools, and the potential for industrial applications of THz spectroscopic and imaging techniques are discussed.

Terahertz spectroscopy and imaging – Modern techniques and applications

The scaling of complementary metal oxide semiconductor transistors has led to the silicon dioxide layer, used as a gate dielectric, being so thin (14?nm) that its leakage current is too large It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (?) or 'high K' gate oxides such as hafnium oxide and hafnium silicate These oxides had not been extensively studied like SiO2, and they were found to have inferior properties compared with SiO2, such as a tendency to crystallize and a high density of electronic defects Intensive research was needed to develop these oxides as high quality electronic materials This review covers both scientific and technological issues?the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure and reactions, their electronic structure, bonding, band offsets, electronic defects, charge trapping and conduction mechanisms, mobility degradation and flat band voltage shifts The oxygen vacancy is the dominant electron trap It is turning out that the oxides must be implemented in conjunction with metal gate electrodes, the development of which is further behind Issues about work function control in metal gate electrodes are discussed

https://iopscience.iop.org/article/10.1088/0034-4885/69/2/R02/pdf

High dielectric constant gate oxides for metal oxide Si transistors

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or 'high K' gate oxides such as hafnium oxide and hafnium silicate. Little was known about such oxides, and it was soon found that in many respects they have inferior electronic properties to SiO2 ,s uch as a tendency to crystallise and a high concentration of electronic defects. Intensive research is underway to develop these oxides into new high quality electronic materials. This review covers the choice of oxides, their structural and metallurgical behaviour, atomic diffusion, their deposition, interface structure and reactions, their electronic structure, bonding, band offsets, mobility degradation, flat band voltage shifts and electronic defects. The use of high K oxides in capacitors of dynamic random access memories is also covered.

/pdf/high-dielectric-constant-oxides-cotu2e70vd.pdf

High dielectric constant oxides

We report new evidence that intrinsic surface states play a predominant role in determining Schottky-barrier energies for III-V semiconductors. Namely, empty surfacestate levels have been measured (using photoelectron yield spectroscopy) for (110) GaSb, GaAs, GaP, InSb, and InAs whose one-electron energies correlate with Schottky-barrier energies reported by Mead and Spitzer. Also, these sharp molecularlike surface states are shown to be insensitive to metal overlayers and to be cation derived.

Relation of Schottky Barriers to Empty Surface States on III-V Semiconductors

The literature currently abounds with experimental studies of Schottky barrier heights of various metals upon many semiconductors. Unfortunately, these studies present some puzzling aspects: (1) Commonly, barriers determined by C–V studies are larger than barriers determined by I–V studies, and (2) Results obtained by different workers under apparently identical conditions are not always similar. A possible explanation for such effects is simply that many/most contacts experimentally achieved are in fact multiphase; these different barrier‐height regions could result from variations in the metallurgical reactions assumed by many current models of Schottky barrier energetics. The different barrier heights measured by different techniques follow directly from the functional form of the relevant probes (e.g., I–V would more heavily weight a low‐barrier region). The lack of reproducibility would follow from kinetic aspects of the relevant metallurgical interactions. A recent publication discusses the function...

Size dependence of ’’effective’’ barrier heights of mixed‐phase contacts

Spectral ellipsometry at 300 K, in the range 0.8--5.5 eV, has been used to study the bulk and surface oxide properties of a molecular-beam-epitaxy grown ${\mathrm{Zn}}_{0.53}{\mathrm{Cd}}_{0.47}\mathrm{S}\mathrm{e}/\mathrm{I}\mathrm{n}\mathrm{P}$ film ($\ensuremath{\approx}1\ensuremath{\mu}\mathrm{m}$ thick). We have observed the direct gap ${E}_{0},$ which exhibits a well-defined excitonic structure, its spin-orbit split component ${E}_{0}+{\ensuremath{\Delta}}_{0},$ as well as the spin-orbit split ${E}_{1},$ ${E}_{1}+{\ensuremath{\Delta}}_{1}$ doublet. The experimental data over the entire measured spectral range (after oxide removal) have been fit using a model dielectric function based on the electronic energy-band structure near critical points plus excitonic and Coulomb enhancement effects. The influence of a native oxide on the optical properties also was investigated.

Spectral ellipsometry investigation of Zn 0.53 Cd 0.47 Se lattice matched to InP

We have determined the interconfiguration mixing ratios (${\mathrm{Sm}}^{+3}$/${\mathrm{Sm}}^{+2}$) of 1.4 and 4.1 for ${\mathrm{Sm}}_{0.81}$${\mathrm{Y}}_{0.19}$S and Sm${\mathrm{As}}_{0.18}$${\mathrm{S}}_{0.82}$ at 295 K from their x-ray photoemission spectra. These ratios are observed to decrease reversibly by a factor of 2 at 110 K. The agreement of these results with valences deduced from lattice-constant measurements is direct evidence that configuration mixing is responsible for the anomalous temperature- and composition-dependence of the lattice constant.

John L. Freeouf

Papers

Relation of Schottky Barriers to Empty Surface States on III-V Semiconductors

Size dependence of ’’effective’’ barrier heights of mixed‐phase contacts

Spectral ellipsometry investigation of Zn 0.53 Cd 0.47 Se lattice matched to InP

Temperature- and Composition-Dependent Valence Mixing of Sm in Cation-and Anion-Substituted SmS Observed by X-ray Photoemission Spectroscopy

Microscopic Compound Formation at the Pd-Si(111) Interface