John L. Freeouf

TL;DR: In this article, a GaAs crystal is provided with a surface layer of arsenic, formed by exposure to light having a photon energy greater than 1.8 eV, at a power density of 0.01 to 0.5 watts per cm2 while the GaAs immersed in a 1:1 HCl:H2 O solution for a period of 10-30 minutes.

TL;DR: In this article, a far UV spectroscopic ellipsometer system working up to 9 eV was developed and applied to the characterization of three 4H-SiC samples with different surface conditions.

TL;DR: In this paper, the lowest conduction band states are derived from anti-bonding transition metal (Tm) and rare earth (Re) d*-states, and a method for obtaining independent control of band gap energies and dielectric constants in complex oxides, ReTmO 3, results from coupling of Tm and Re atom d-states bonded to the same oxygen atom.

TL;DR: In this paper, an ex situ investigation of the InP/In0.53Ga0.47As (001) heterojunction interface as a function of InP overlayer thickness (50-1000 nm) and the surfaces of n− and p−doped In0.

TL;DR: In this article, a semiconductor device where an emitter material composition and doping profile produces an electron gas in a base adjacent a band offset heterojunction interface, the electrons in the gas in the base are confined under bias by a low barrier and the ballistic carriers have their kinetic energy controlled to prevent intervalley scattering by an electrostatic barrier that under influence of bias provides an essentially level conduction band in the portion of the base adjacent the collector.