J
John L. Freeouf
Researcher at IBM
Publications - 100
Citations - 4081
John L. Freeouf is an academic researcher from IBM. The author has contributed to research in topics: Schottky barrier & Band gap. The author has an hindex of 32, co-authored 100 publications receiving 4003 citations. Previous affiliations of John L. Freeouf include Oregon Health & Science University & Portland State University.
Papers
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Journal ArticleDOI
Measurement of the band offsets between amorphous LaAlO3 and silicon
Lisa F. Edge,Darrell G. Schlom,Scott A. Chambers,E. Cicerrella,John L. Freeouf,Bernhard Holländer,Jürgen Schubert +6 more
TL;DR: The conduction and valence band offsets between amorphous LaAlO3 and silicon have been determined from x-ray photoelectron spectroscopy measurements in this article.
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Atomic layer deposition of ZnSe/CdSe superlattice nanowires
TL;DR: In this paper, the phase of alternating layers of ZnSe and CdSe is zinc blende and the (111) planes of the two superlattices are oriented at 60°.
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GaAs metallization: Some problems and trends
Jerry M. Woodall,John L. Freeouf +1 more
TL;DR: Ohmic and Schottky barrier contacts with desired properties are difficult to form on GaAs devices due to the fact that the position of the Fermi energy is loosely "pinned" near midgap for GaAs surfaces which are metallized using conventional techniques.
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Effective barrier heights of mixed phase contacts: Size effects
TL;DR: In this paper, the effects of lateral dimensions on Schottky barrier formation were investigated and it was shown that mixed phase contacts, with size effects, can affect ideality factors, and can also cause disagreement between C•V and I•V barrier heights.
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Directed growth of nickel silicide nanowires
TL;DR: In this paper, Ni foils and thin Ni films (∼10-100nm) were evaporated on 1-μm-thick layers of SiO2 predeposited on Si wafers.