Showing papers by "John W. Palmour published in 2015"
19 May 2015
TL;DR: In this paper, the authors present the full characteristics of a newer generation 10kV, 340mOmega SiC MOSFET and 10k V, 15A SiC diode chip set and discuss target applications.
Abstract: For the first time, we present the full characteristics of a newer generation 10kV, 340mOmega SiC MOSFET and 10kV, 15A SiC diode chip set and discuss target applications. The 8.1mm x 8.1mm 10kV SiC MOSFET die was measured to have record low specific RDSON of 100mOmega- cm2 at 25deg C, 15A current rating, and only 6.5mJ total switching energy when switched at 6kV, 15A, 150deg C. The accompanying anti-parallel 10kV diode chip has the same die size, a 25% reduction from previous efforts. This new class of 10kV SiC die is targeted for several new applications, including solid state transformers utilizing a 7.2kV or 4.16kV line-voltage.
71 citations
TL;DR: In this paper, the authors show that the Ba-modified MOSFETs show a slight decrease in mobility with heating to 150 °C, as expected when mobility is not interface-trap-limited, but phonon-scattering-limited.
Abstract: Alkali (Rb, Cs) and alkaline earth elements (Sr, Ba) provide SiO2/SiC interface conditions suitable for obtaining high metal-oxide-semiconductor field-effect-transistor (MOSFET) channel mobility on the 4H-SiC Si-face (0001), without the standard nitric oxide (NO) anneal. The alkali elements Rb and Cs result in field-effect mobility (μFE) values >25 cm2/V.s, and the alkaline earth elements Sr and Ba resulted in higher μFE values of 40 and 85 cm2/V.s, respectively. The Ba-modified MOSFETs show a slight decrease in mobility with heating to 150 °C, as expected when mobility is not interface-trap-limited, but phonon-scattering-limited. The interface state density is lower than that obtained with nitric oxide (NO) passivation. Devices with a Ba interface layer maintain stable mobility and threshold voltage under ±2 MV/cm gate bias stress at 175 °C, indicating no mobile ions.
19 citations
TL;DR: In this paper, the 1/f noise has been investigated at 300 and 77 K in high-quality 4H-SiC Schottky diodes, and it was shown that at 77 K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of the main part of the diode area with a comparatively high barrier and the current flowing through the nanosized patches with a relatively low barrier.
Abstract: The 1/f noise has been investigated for the first time at 300 and 77 K in high-quality 4H-SiC Schottky diodes. It is shown that, that at 77 K, the dependence of the spectral noise density on current, SI(I), differs fundamentally between the cases of the current flowing through the main part of the diode area with a comparatively high barrier and the current flowing through the nanosized patches with a comparatively low barrier.