S
Scott Allen
Researcher at Cree Inc.
Publications - 82
Citations - 3171
Scott Allen is an academic researcher from Cree Inc.. The author has contributed to research in topics: MOSFET & Layer (electronics). The author has an hindex of 27, co-authored 77 publications receiving 2908 citations. Previous affiliations of Scott Allen include Durham University & North Carolina State University.
Papers
More filters
Journal ArticleDOI
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
Scott Sheppard,K. Doverspike,W.L. Pribble,Scott Allen,John W. Palmour,L.T. Kehias,T.J. Jenkins +6 more
TL;DR: In this paper, the performance of high-power GaN/Al/sub 0.86/N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates is reported.
Patent
Nitride based transistors on semi-insulating silicon carbide substrates
TL;DR: In this article, a high electron mobility transistor (HEMT) is described that includes a semi-insulating silicon carbide substrate, an aluminum nitride buffer layer on the substrate and an insulating gallium nitride layer on buffer layer, an active structure of aluminum gallium-nitride on the gallium oxide layer, a passivation layer on active structure, and respective source, drain, and gate contacts to the active structure.
Journal ArticleDOI
High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications
Samir Hazra,Ankan De,Lin Cheng,John W. Palmour,Marcelo Schupbach,Brett Hull,Scott Allen,Subhashish Bhattacharya +7 more
TL;DR: In this paper, the authors report switching performance of a new 1700-V, 50-A SiC MOSFET designed and developed by Cree, Inc. and compare it with other SiC devices.
Proceedings ArticleDOI
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
John W. Palmour,Lin Cheng,Vipindas Pala,Edward Van Brunt,Daniel J. Lichtenwalner,Gangyao Wang,Jim Richmond,Michael J. O'Loughlin,Sei-Hyung Ryu,Scott Allen,Albert A. Burk,Charles Scozzie +11 more
TL;DR: In this article, the 4H-SiC MOSFETs were further optimized for high power, high-frequency, and high-voltage energy conversion and transmission applications and achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV.
Proceedings ArticleDOI
10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems
Vipindas Pala,Edward Van Brunt,Lin Cheng,Michael J. O'Loughlin,Jim Richmond,Albert A. Burk,Scott Allen,David Grider,John W. Palmour,Charles Scozzie +9 more
TL;DR: In this article, the authors developed 10 kV/20 A SiC MOSFETs with a chip size of 8.1 × 8 mm2 and a specific on-resistance (RON, SP) of 100 MΩ-cm2 at 25 °C.