Jonas Gradauskas

TL;DR: In this paper, optical transmittance measurements of perovskite layers containing different cesium concentrations (0, 15%) were carried out on purpose to evaluate the utility of the layers for the fabrication of monolithic perovsite/silicon tandem solar cells.

TL;DR: In this article, a diode structure to detect THz/subTHz radiation based on an MBE-grown modulation-doped GaAs/Al0.75As structure is proposed.

TL;DR: In this paper, the authors describe an asymmetrically shaped n-n+planar GaAs diode whose operation is based on nonuniform free charge carrier heating effects, which has been shown to have an operational bandwidth for detection ranging from 30 GHz up to 2.5 THz at room temperature.

TL;DR: In this paper, the authors proposed a novel concept for a semiconductor planar detector, which exhibits high responsivity and strong spectral dependence of it at room temperature, and experiments at higher radiation frequencies performed under the action of pulsed CO2 laser radiation reveal the planar diode as a fast IR detector and a promising candidate for terahertz radiation sensing.

TL;DR: In this article, a microwave diode based on a modulation-doped GaAs/Al 0.25Ga0.75As structure was proposed, and the voltage sensitivity of the diode at room temperature is close to 0.3 V W−1 at 10 GHz, which is comparable to the value obtained using similarly shaped and sized diodes based on bulk n-GaAs.