Although gold is the subject of one of the most ancient themes of investigation in science, its renaissance now leads to an exponentially increasing number of publications, especially in the context of emerging nanoscience and nanotechnology with nanoparticles and self-assembled monolayers (SAMs). We will limit the present review to gold nanoparticles (AuNPs), also called gold colloids. AuNPs are the most stable metal nanoparticles, and they present fascinating aspects such as their assembly of multiple types involving materials science, the behavior of the individual particles, size-related electronic, magnetic and optical properties (quantum size effect), and their applications to catalysis and biology. Their promises are in these fields as well as in the bottom-up approach of nanotechnology, and they will be key materials and building block in the 21st century. Whereas the extraction of gold started in the 5th millennium B.C. near Varna (Bulgaria) and reached 10 tons per year in Egypt around 1200-1300 B.C. when the marvelous statue of Touthankamon was constructed, it is probable that “soluble” gold appeared around the 5th or 4th century B.C. in Egypt and China. In antiquity, materials were used in an ecological sense for both aesthetic and curative purposes. Colloidal gold was used to make ruby glass 293 Chem. Rev. 2004, 104, 293−346

Gold nanoparticles: assembly, supramolecular chemistry, quantum-size-related properties, and applications toward biology, catalysis, and nanotechnology.

The compelling demand for higher performance and lower power consumption in electronic systems is the main driving force of the electronics industry's quest for devices and/or architectures based on new materials. Here, we provide a review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches. We focus on the performance limits and advantages of these materials and associated technologies, when exploited for both digital and analog applications, focusing on the main figures of merit needed to meet industry requirements. We also discuss the use of two-dimensional materials as an enabling factor for flexible electronics and provide our perspectives on future developments.

Electronics based on two-dimensional materials

https://iopscience.iop.org/article/10.1088/1468-6996/11/4/044305/pdf

Present status of amorphous In–Ga–Zn–O thin-film transistors

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The effect of water exposure on amorphous indium-gallium-zinc oxide (a-IGZO) semiconductors was reported. It was found that water can diffuse in and out of the a-IGZO film, reversibly affecting the transistor properties. Two competing mechanisms depending on the thickness of the active channel were clarified. The electron donation effect caused by water adsorption dominated for the thicker a-IGZO films (⩾100nm), which was manifested in the large negative shift (>14V) of the threshold voltage. However, in the case of the thinner a-IGZO films (⩽70nm), the dominance of the water-induced acceptorlike trap behavior was observed. The direct evidence for this behavior was that the subthreshold swing was greatly deteriorated from 0.18V/decade (before water exposure) to 4.4V/decade (after water exposure) for the thinnest a-IGZO films (30nm). These results can be well explained by the screening effect of the intrinsic bulk traps of the a-IGZO semiconductor.

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Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water

The authors report on the fabrication of thin film transistors (TFTs), which use an amorphous indium gallium zinc oxide (a-IGZO) channel, by rf sputtering at room temperature and for which the channel length and width are patterned by photolithography and dry etching. To prevent plasma damage to the active channel, a 100-nm-thick SiOx layer deposited by plasma enhanced chemical vapor deposition was adopted as an etch stopper structure. The a-IGZO TFT (W∕L=10μm∕50μm) fabricated on glass exhibited a high field-effect mobility of 35.8cm2∕Vs, a subthreshold gate swing value of 0.59V∕decade, a thrseshold voltage of 5.9V, and an Ion∕off ratio of 4.9×106, which is acceptable for use as the switching transistor of an active-matrix TFT backplane.

High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

Neuromorphic computing is a promising alternative to conventional computing systems as it could enable parallel computation and adaptive learning process. However, the development of energy efficient neuromorphic hardware systems has been hindered by the limited performance of analog synaptic devices. Here, we demonstrate the analog conductance modulation behavior in the ferroelectric thin-film transistors (FeTFT) that have the nanoscale ferroelectric material and oxide semiconductors. Accurate control of polarization changes in the nanoscale ferroelectric layer induces conductance modulation to demonstrate linear potentiation and depression characteristics of FeTFTs. Our devices show potentiation and depression properties, including high linearity, multiple states, and small cycle-to-cycle/device-to-device variations. In simulations with measured properties, a neuromorphic system with FeTFT achieves 91.1% recognition accuracy of handwritten digits. This work may provide a way to realize the neuromorphic hardware systems that use FeTFTs as the synaptic devices.

Ferroelectric Analog Synaptic Transistors

The development of electronic devices possessing the functionality of biological synapses is a crucial step toward replicating the capabilities of the human brain. Of the various materials that have been used to realize artificial synapses, renewable natural materials have the advantages of being abundant, inexpensive, biodegradable, and ecologically benign. In this study, we report a biocompatible artificial synapse based on a matrix of the biopolymer ι-carrageenan (ι-car), which exploits Ag dynamics. This artificial synapse emulates the short-term plasticity (STP), paired-pulse facilitation (PPF), and transition from STP to long-term potentiation (LTP) of a biological synapse. The above-mentioned characteristics are realized by exploiting the similarities between the Ag dynamics in the ι-car matrix and the Ca2+ dynamics in a biological synapse. By demonstrating a method that uses biomaterials and Ag dynamics to emulate synaptic functions, this study confirms that ι-car has the potential for constructing...

Short-Term Plasticity and Long-Term Potentiation in Artificial Biosynapses with Diffusive Dynamics

A number of synapse devices have been intensively studied for the neuromorphic system which is the next-generation energy-efficient computing method. Among these various types of synapse devices, photonic synapse devices recently attracted significant attention. In particular, the photonic synapse devices using persistent photoconductivity (PPC) phenomena in oxide semiconductors are receiving much attention due to the similarity between relaxation characteristics of PPC phenomena and Ca2+ dynamics of biological synapses. However, these devices have limitations in its controllability of the relaxation characteristics of PPC behaviors. To utilize the oxide semiconductor as photonic synapse devices, relaxation behavior needs to be accurately controlled. In this study, a photonic synapse device with controlled relaxation characteristics by using an oxide semiconductor and a ferroelectric layer is demonstrated. This device exploits the PPC characteristics to demonstrate synaptic functions including short-term plasticity, paired-pulse facilitation (PPF), and long-term plasticity (LTP). The relaxation properties are controlled by the polarization of the ferroelectric layer, and this polarization is used to control the amount by which the conductance levels increase during PPF operation and to enhance LTP characteristics. This study provides an important step toward the development of photonic synapses with tunable synaptic functions.

Synergistic Improvement of Long-Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia-Based Oxide-Semiconductor Transistors.

The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H(2)O/O(2) redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H(2)O/O(2) redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H(2)O/O(2) redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.

Min-Kyu Kim

Papers

High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper

Ferroelectric Analog Synaptic Transistors

Short-Term Plasticity and Long-Term Potentiation in Artificial Biosynapses with Diffusive Dynamics

Synergistic Improvement of Long-Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia-Based Oxide-Semiconductor Transistors.

A facile route to recover intrinsic graphene over large scale.