J
Joseph W. Hemsky
Researcher at Wright State University
Publications - 15
Citations - 2066
Joseph W. Hemsky is an academic researcher from Wright State University. The author has contributed to research in topics: Electron beam processing & Vacancy defect. The author has an hindex of 9, co-authored 15 publications receiving 1988 citations.
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Journal ArticleDOI
Residual Native Shallow Donor in ZnO
TL;DR: In this paper, the authors show that Zn-sublattice defect is the dominant native shallow donor in ZnO and quantitatively explain the high displacement threshold energy.
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Defect Donor and Acceptor in GaN
David C. Look,Donald C. Reynolds,Joseph W. Hemsky,J. R. Sizelove,R. L. Jones,Richard J. Molnar +5 more
TL;DR: In this article, the authors showed that high-energy (0.7{endash}1MeV) electron irradiation in GaN grown on sapphire produces shallow donors and deep or shallow acceptors at equal rates, 1{plus_minus}0.2 cm{sup {minus}1}.
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Production and annealing of electron irradiation damage in ZnO
TL;DR: In this paper, the authors show that ZnO is significantly more "radiation hard" than Si, GaAs, or GaN, and should be useful for applications in high-irradiation environments, such as electronics in space satellites.
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Electron-Irradiation-Induced Deep Level in n -Type GaN
TL;DR: In this article, deep-level transient spectroscopy measurements of n-type GaN epitaxial layers irradiated with 1-MeV electrons reveal an irradiation-induced electron trap at EC−0.18
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Defect Models in Electron-Irradiated N-Type GaAs
TL;DR: In this article, a degenerate, n-type (n≂2×1017 cm−3), molecular beam epitaxial GaAs layers, and Hall effect measurements have been carried out during the irradiation in order to get accurate defect production data.