Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

A revolution in novel nanoparticles and colloidal building blocks has been enabled by recent breakthroughs in particle synthesis These new particles are poised to become the ‘atoms’ and ‘molecules’ of tomorrow’s materials if they can be successfully assembled into useful structures Here, we discuss the recent progress made in the synthesis of nanocrystals and colloidal particles and draw analogies between these new particulate building blocks and better-studied molecules and supramolecular objects We argue for a conceptual framework for these new building blocks based on anisotropy attributes and discuss the prognosis for future progress in exploiting anisotropy for materials design and assembly

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Anisotropy of building blocks and their assembly into complex structures

Electrons have a charge and a spin, but until recently these were considered separately. In classical electronics, charges are moved by electric fields to transmit information and are stored in a capacitor to save it. In magnetic recording, magnetic fields have been used to read or write the information stored on the magnetization, which 'measures' the local orientation of spins in ferromagnets. The picture started to change in 1988, when the discovery of giant magnetoresistance opened the way to efficient control of charge transport through magnetization. The recent expansion of hard-disk recording owes much to this development. We are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials. Ultimately, 'spin currents' could even replace charge currents for the transfer and treatment of information, allowing faster, low-energy operations: spin electronics is on its way.

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The emergence of spin electronics in data storage

http://files.janapv.webnode.cz/200000097-8a03f8afdf/ex_bias_nano.pdf

Exchange bias in nanostructures

Simple rules for the understanding of Heusler compounds

Several magnetic and optical processes contribute to the magneto-optical response of nickel thin films after excitation by a femtosecond laser pulse. We achieved a first complete identification by explicitly measuring the time-resolved Kerr ellipticity and rotation, as well as its temperature and magnetic field dependence in epitaxially grown (111) and (001) oriented Cu/Ni/Cu wedges. The first hundreds of femtoseconds the response is dominated by state filling effects. The true demagnetization takes approximately 0.5-1 ps. At the longer (sub-ns) time scales the spins are found to precess in their anisotropy field. Simple and transparent models are introduced to substantiate our interpretation.

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Ultrafast magneto-optics in nickel: magnetism or optics?

A novel, all-optical method to excite and detect spin waves in magnetic materials is presented. By exploiting the temperature dependence of the magnetic anisotropy, an ultrashort laser pulse is efficiently converted in a picosecond "anisotropy field" pulse that triggers a coherent precession of the magnetization. Recording the temporal evolution of the precessing spins by a time-delayed probe-pulse provides a quantitative method to study locally the magnetic anisotropy, as well as switching and damping phenomena in micromagnetic structures. Applications to nickel and permalloy ( Ni80Fe20) films are discussed, particularly showing the possibility to explore standing spin waves in thin films.

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All-optical probe of coherent spin waves.

As the first magnetic random access memories are finding their way onto the market, an important issue remains to be solved: the current density required to write magnetic bits becomes prohibitively high as bit dimensions are reduced. Recently, spin-orbit torques and the spin-Hall effect in particular have attracted significant interest, as they enable magnetization reversal without high current densities running through the tunnel barrier. For perpendicularly magnetized layers, however, the technological implementation of the spin-Hall effect is hampered by the necessity of an in-plane magnetic field for deterministic switching. Here we interface a thin ferromagnetic layer with an anti-ferromagnetic material. An in-plane exchange bias is created and shown to enable field-free S HE-driven magnetization reversal of a perpendicularly magnetized Pt/Co/IrMn structure. Aside from the potential technological implications, our experiment provides additional insight into the local spin structure at the ferromagnetic/anti-ferromagnetic interface.

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Field-free magnetization reversal by spin-Hall effect and exchange bias.

A magnetic “spin filter” tunnel barrier, sandwiched between a nonmagnetic metal and a magnetic metal, is used to create a magnetoresistive tunnel device, somewhat analogous to an optical polarizer-analyzer configuration. The resistance of these trilayer structures depends on the relative magnetization orientation of the spin filter and the ferromagnetic electrode. The spin filtering in this configuration yields a previously unobserved magnetoresistance effect, exceeding 100%.

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Large magnetoresistance using hybrid spin filter devices

A magnetic "spin filter" tunnel barrier, sandwiched between a non-magnetic metal and a magnetic metal, is used to create a new magnetoresistive tunnel device, somewhat analogous to an optical polarizer-analyzer configuration. The resistance of these trilayer structures depends on the relative magnetization orientation of the spin filter and the ferromagnetic electrode. The spin filtering in this configuration yields a previously unobserved magnetoresistance effect, exceeding 100%.

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JT Jürgen Kohlhepp

Papers

Ultrafast magneto-optics in nickel: magnetism or optics?

All-optical probe of coherent spin waves.

Field-free magnetization reversal by spin-Hall effect and exchange bias.

Large magnetoresistance using hybrid spin filter devices

Large magnetoresistance using hybrid spin filter devices