Shuang Liang

TL;DR: In this paper, in situ surface passivation Ge substrate by using trimethylaluminum (TMA) prior to HfTiO films deposition and electrical properties of gate stacks have been investigated by X-ray photoelectron spectroscopy (XPS) and electrical measurements systematically.

TL;DR: In this article, a comparative study on the cleaning effect of the intrinsic oxide covering GaAs surface using TMA precursor and Al2O3 buffer layer was performed, and the combined results of X-ray photoemission spectroscopy (XPS) analysis and electrical evaluation indicates that the trimethylaluminum (TMA) precursor can effectively remove surface oxides on the GaAs substrate and inhibit oxygen diffusion in a manner similar to the Al 2 O 3 buffer layer, thus avoiding the generation of the low-k Al 2O3 interface layer.

TL;DR: In this article, Annealing temperature dependent microstructure, optical and electrical properties of solgel-deposited HfGdO high-k gate dielectric thin films on Si substrates are systematically investigated.

TL;DR: In this paper, the effects of the passivation layer and the forming gas annealing (FGA) temperature were explored by studying the interfacial chemical bonding states and electrical properties of HGO/GaAs and H GO/Al2O3/GAAs gate stacks via x-ray photoelectron spectroscopy (XPS) measurements.

TL;DR: In this article, the effects of atomic layer-deposited (ALD) Al2O3 passivation layers with different thicknesses on the interface chemistry and electrical properties of sputtering-derived HfYO gate dielectrics on Si substrates have been investigated.