J
Julien Borghetti
Researcher at Hewlett-Packard
Publications - 36
Citations - 4270
Julien Borghetti is an academic researcher from Hewlett-Packard. The author has contributed to research in topics: Memristor & Carbon nanotube. The author has an hindex of 20, co-authored 36 publications receiving 3922 citations. Previous affiliations of Julien Borghetti include DSM & Centre national de la recherche scientifique.
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Journal ArticleDOI
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Julien Borghetti,Gregory S. Snider,Philip J. Kuekes,Jianhua Yang,Duncan Stewart,Duncan Stewart,R. Stanley Williams +6 more
TL;DR: Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.
Journal ArticleDOI
Switching dynamics in titanium dioxide memristive devices
Matthew D. Pickett,Dmitri B. Strukov,Julien Borghetti,Jianhua Yang,Gregory S. Snider,Duncan Stewart,R. Stanley Williams +6 more
TL;DR: In this article, a mathematical definition of a memristive device provides the framework for understanding the physical processes involved in bipolar switching and also yields formulas that can be used to compute and predict important electrical and dynamical properties of the device.
Journal ArticleDOI
A hybrid nanomemristor/transistor logic circuit capable of self-programming.
Julien Borghetti,Zhiyong Li,Joseph Straznicky,Xuema Li,Douglas A. A. Ohlberg,Wei Wu,Duncan Stewart,R. Stanley Williams +7 more
TL;DR: The digitally configured memristor crossbars were used to perform logic functions, to serve as a routing fabric for interconnecting the FETs and as the target for storing information.
Journal ArticleDOI
Coupled Ionic and Electronic Transport Model of Thin‐Film Semiconductor Memristive Behavior
TL;DR: A more physical model based on numerical solutions of coupled drift-diffusion equations for electrons and ions with appropriate boundary conditions is provided to obtain physical insight into the transport processes responsible for memristive behavior in semiconductor films.