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Jun Zhao

Publications -  8
Citations -  196

Jun Zhao is an academic researcher. The author has contributed to research in topics: Ultraviolet & Quantum dot. The author has an hindex of 6, co-authored 8 publications receiving 163 citations.

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Chlorine doped graphene quantum dots: Preparation, properties, and photovoltaic detectors

TL;DR: In this article, a vertical (Cl)-GQDs based photovoltaic detectors have been demonstrated, both the light absorbing and electron accepting roles for (Cl) GQDs in photodetection have been found, resulting in an exceptionally big ratio of photocurrent to dark current as high as ∼105 at room temperature using a 405nm laser irradiation under the reverse bias voltage.
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Fabrication and properties of a high-performance chlorine doped graphene quantum dot based photovoltaic detector

TL;DR: In this paper, a chlorine doped GQD (Cl-GQD) based photovoltaic photodetectors have been fabricated using a solution process, and it was found that the presence of GQDs can significantly enhance the performance of the device.
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High performance ultraviolet photodetectors based on ZnO nanoflakes/PVK heterojunction

TL;DR: In this article, a transparent conducting polymer poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)-coated quartz substrate is employed as the anode in replacement of the commonly ITO-coated glass in order to harvest shorter UV light.
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Solution processable high-performance infrared organic photodetector by iodine doping

TL;DR: In this article, the performance of an OPD in the near-infrared (NIR) region is tremendously improved by doping iodine into the device's active layer (P3HT:PCBM:I2), 2.7 wt% iodine doping may increase the absorption by 31.3% for the active film and result in a ∼11
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An extreme high-performance ultraviolet photovoltaic detector based on a ZnO nanorods/phenanthrene heterojunction

TL;DR: In this article, an extremely high UV response for a ZnO nanorods/phenanthrene (Phen) photovoltaic detector has been realized, utilizing phenanthrene as a p-type wide gap organic semiconductor; a detectivity as high as ∼9.0 × 1013 cm Hz 1/2 W−1 has been reached, showing significant potential for optoelectronic applications.