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Junfeng Cui

Researcher at Dalian University of Technology

Publications -  36
Citations -  1008

Junfeng Cui is an academic researcher from Dalian University of Technology. The author has contributed to research in topics: Nanowire & Amorphous solid. The author has an hindex of 11, co-authored 36 publications receiving 698 citations. Previous affiliations of Junfeng Cui include Chinese Academy of Sciences.

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Environment friendly chemical mechanical polishing of copper

TL;DR: In this article, a kind of novel chemical mechanical polishing slurry is developed consisting of silica, hydrogen peroxide and chitosan oligosaccharide, where all the three compositions are environment friendly.
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New Deformation-Induced Nanostructure in Silicon.

TL;DR: A new deformation-induced nanostructure was observed by transmission electron microscopy, consisting of an amorphous phase, a new tetragonal phase, slip bands, twinning superlattices, and a single crystal, providing new insights for potential applications in transistors, integrated circuits, diodes, solar cells, and energy storage systems.
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A novel approach of mechanical chemical grinding

TL;DR: In this paper, a uniform wear layer of 48 nm in thickness was obtained on a silicon wafer ground by the C2 at a feed rate of 12μm/min, which is less than one third that formed by a conventional diamond wheel with mesh size of 5000.
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Enhanced Thermal Conductivity of Epoxy Composites Filled with 2D Transition Metal Carbides (MXenes) with Ultralow Loading.

TL;DR: The results show that the thermal properties of the composites are improved in comparison with the neat epoxy, and the composite presents an increased glass transition temperature, high thermal stability and lower coefficient of thermal expansion.
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Direct formation of wafer-scale single-layer graphene films on the rough surface substrate by PECVD

TL;DR: In this paper, the combined techniques of PECVD and the growth of graphene underneath the catalyst layer were proposed, and transfer-free single-layer graphene films with 2.5 inch in diameter on quartz substrate can be obtained with the growth temperature of 700°C, which is 250°C lower than that for graphene synthesis using thermal CVD.