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Zhenyu Zhang

Researcher at Dalian University of Technology

Publications -  14
Citations -  940

Zhenyu Zhang is an academic researcher from Dalian University of Technology. The author has contributed to research in topics: Chemical-mechanical planarization & Grinding. The author has an hindex of 9, co-authored 14 publications receiving 693 citations. Previous affiliations of Zhenyu Zhang include Chinese Academy of Sciences.

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Environment friendly chemical mechanical polishing of copper

TL;DR: In this article, a kind of novel chemical mechanical polishing slurry is developed consisting of silica, hydrogen peroxide and chitosan oligosaccharide, where all the three compositions are environment friendly.
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A novel approach of chemical mechanical polishing for a titanium alloy using an environment-friendly slurry

TL;DR: In this paper, a novel approach of CMP is developed using an environment-friendly slurry consisting of silica, hydrogen peroxide (H2O2), malic acid and deionized water.
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New Deformation-Induced Nanostructure in Silicon.

TL;DR: A new deformation-induced nanostructure was observed by transmission electron microscopy, consisting of an amorphous phase, a new tetragonal phase, slip bands, twinning superlattices, and a single crystal, providing new insights for potential applications in transistors, integrated circuits, diodes, solar cells, and energy storage systems.
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A novel approach of mechanical chemical grinding

TL;DR: In this paper, a uniform wear layer of 48 nm in thickness was obtained on a silicon wafer ground by the C2 at a feed rate of 12μm/min, which is less than one third that formed by a conventional diamond wheel with mesh size of 5000.
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Direct formation of wafer-scale single-layer graphene films on the rough surface substrate by PECVD

TL;DR: In this paper, the combined techniques of PECVD and the growth of graphene underneath the catalyst layer were proposed, and transfer-free single-layer graphene films with 2.5 inch in diameter on quartz substrate can be obtained with the growth temperature of 700°C, which is 250°C lower than that for graphene synthesis using thermal CVD.