Junghwan Kim

TL;DR: New halide materials that meet the requirements of: (i) nontoxicity, (ii) high PLQY, and (iii) ease of fabrication of thin films via the solution process are explored.

TL;DR: In-rich IGZO TFTs consisting of vertically stacked InOx and GaZnOx atomic layers fabricated at a low deposition temperature (200 oC) exhibit significantly high mobilities of ~80 cm2/Vs while keeping a reasonable carrier density of ~1017 cm-3.

TL;DR: This approach provides a solution to the problem of fabricating oxide thin-film transistor-driven OLEDs with both large size and high stability.

TL;DR: Kim et al. as discussed by the authors showed that high partial pressures of oxygen gas during rapid laser deposition transforms amorphous gallium oxide films into semiconductors, achieving an electron Hall mobility of 8.5 cm2V−1.

TL;DR: Although density functional calculations with the generalized gradient approximation predict Sr5P3 to be a metal, electrical conductivity measurement reveal semiconducting properties characterized by a distinct band gap, which indicates that the newly synthesized Sr 5P3 is an ideal one-dimensional electride with the half-filled band by unpaired electrons.