Journal ArticleDOI
Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD
Jiazhen Sheng,Tae Hyun Hong,Hyun Mo Lee,Kyoung Rok Kim,Masato Sasase,Junghwan Kim,Hideo Hosono,Jin-Seong Park +7 more
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TLDR
In-rich IGZO TFTs consisting of vertically stacked InOx and GaZnOx atomic layers fabricated at a low deposition temperature (200 oC) exhibit significantly high mobilities of ~80 cm2/Vs while keeping a reasonable carrier density of ~1017 cm-3.Abstract:
Amorphous InGaZnOx (a-IGZO) thin-film transistors (TFTs) are currently used in flat-panel displays due to their beneficial properties. However, the mobility of ∼10 cm2/(V s) for the a-IGZO TFTs used in commercial organic light-emitting diode TVs is not satisfactory for high-resolution display applications such as virtual and augmented reality applications. In general, the electrical properties of amorphous oxide semiconductors are strongly dependent on their chemical composition; the indium (In)-rich IGZO achieves a high mobility of 50 cm2/(V s). However, the In-rich IGZO TFTs possess another issue of negative threshold voltage owing to intrinsically high carrier density. Therefore, the development of an effective way of carrier density suppression in In-rich IGZO will be a key strategy to the realization of practical high-mobility a-IGZO TFTs. In this study, we report that In-rich IGZO TFTs with vertically stacked InOx, ZnOx, and GaOx atomic layers exhibit excellent performances such as saturation mobilities of ∼74 cm2/(V s), threshold voltage of -1.3 V, on/off ratio of 8.9 × 108, subthreshold swing of 0.26 V/decade, and hysteresis of 0.2 V, while keeping a reasonable carrier density of ∼1017 cm-3. We found that the vertical dimension control of IGZO active layers is critical to TFT performance parameters such as mobility and threshold voltage. This study illustrates the potential advantages of atomic layer deposition processes for fabricating ultrahigh-mobility oxide TFTs.read more
Citations
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Journal ArticleDOI
Materials Science Challenges to Graphene Nanoribbon Electronics.
TL;DR: Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel materials in future nanoelectronic devices due to their exceptional electronic, thermal, and mechanical properties and chemical inertness.
Journal ArticleDOI
Achieving a Low-Voltage, High-Mobility IGZO Transistor through an ALD-Derived Bilayer Channel and a Hafnia-Based Gate Dielectric Stack.
TL;DR: In this article, a bilayer IGZO channel structure consisting of a 10 nm base layer and a 3 nm boost layer was designed based on a cation combinatorial study of the ALD-derived TFTs with HfO2-based gate insulators.
Journal ArticleDOI
Recent progress in the development of backplane thin film transistors for information displays
TL;DR: In this paper, a technical roadmap and progress update for backplane thin film transistors (TFTs) used in organic light emitting diodes flat panel displays and next-generation flexible displays is provided.
Journal ArticleDOI
A Review of Phototransistors Using Metal Oxide Semiconductors: Research Progress and Future Directions.
TL;DR: In this article, a review of recent studies on metal oxide phototransistors are reviewed, which have improved the range of light wavelengths and the PPC phenomenon by introducing an absorption layer of oxide or non-oxide hybrid structure.
Journal ArticleDOI
Atomic Layer Deposition Process-Enabled Carrier Mobility Boosting in Field-Effect Transistors through a Nanoscale ZnO/IGO Heterojunction
Hyeon Joo Seul,Min Jae Kim,Hyun Ji Yang,Min Hoe Cho,Min Hee Cho,Woo Bin Song,Jae Kyeong Jeong +6 more
TL;DR: The realization of a high-mobility electron transistor (HEMT) in a ternary IGZO system using the ALD technique is reported and the gate bias stressing test results indicate that FETs with a ZnO/In1- xGaxO1.5 heterojunction channel are much more stable than those with a single In1-xGax O1.
References
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Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Journal ArticleDOI
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films
TL;DR: In this article, the authors investigated carrier transport in a crystalline oxide semiconductor InGaO3(ZnO)5 using single-crystalline thin films and showed that when carrier concentration is less than 2×1018cm−3, logarithm of electrical conductivity decreases in proportion to T−1∕4 and room-temperature Hall mobility was as low as ∼1cm2(Vs)−1.
Journal ArticleDOI
Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics
TL;DR: In this article, the authors review the motivations for, and recent advances in, new gate dielectric materials for incorporation into organic thin-film transistors (OTFTs) for organic electronics.
Journal ArticleDOI
High- k Gate Dielectrics for Emerging Flexible and Stretchable Electronics
Binghao Wang,Binghao Wang,Wei Huang,Lifeng Chi,Mohammed Al-Hashimi,Tobin J. Marks,Antonio Facchetti +6 more
TL;DR: This review summarizes and analyzes recent advances in materials concepts as well as in thin-film fabrication techniques for high- k gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductor types.
Journal ArticleDOI
Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
Akihiro Takagi,Kenji Nomura,Hiromichi Ohta,Hiromichi Ohta,Hiroshi Yanagi,Toshio Kamiya,Masahiro Hirano,Hideo Hosono +7 more
TL;DR: In this article, the authors investigated the carrier transport properties in amorphous oxide semiconductor InGaZnO 4 (a-IGZO) thin films using temperature dependence of Hall measurements and found that Hall mobility increased distinctly as carrier concentration increased.
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