Junhua Gao

TL;DR: Electrochemical metallization memory cells based on lightly oxidized ZnS films are found to show highly controllable memristive switching with an ultralow SET voltage of several millivolts, which provides another effective solution to the relatively high energy consumption of synaptic devices besides reducing the operating current and pulse width.

TL;DR: Wang et al. as discussed by the authors developed and explored WTi-Al2O3 cermet-based absorbing coatings, demonstrating a solar absorptance of ~93% and a very low thermal emissivity of 10.3% even after annealing at 600°C for 840h in vacuum.

TL;DR: In this article, the spike-timing-dependent plasticity, an important Hebbian learning rule, has been implemented in this type of synaptic device, and the carrier trapping/detrapping level can be controllably adjusted by regulating the current compliance level or voltage amplitude.

TL;DR: In this paper, polycrystalline and high resistance ZnSnN2 films were fabricated by magnetron sputtering technique, then semiconducting films were achieved after post-annealing, and finally Si/ZnN2 p-n junctions were constructed.

TL;DR: In this paper, the authors showed that the metal filament grows from the anode towards the cathode and the filament rupture and rejuvenation occur at the cathodic interface, similar to the case of oxide-based ECM cells.